Abstract
We investigated the damp heat stability of Ga-doped ZnO (GZO) thin films grown on glass substrates. GZO thin films with thicknesses of 150 nm were grown on glass substrates by rf-magnetron sputtering. After the deposition, a damp heat stability test was performed at various temperature (50 ∼ 65 °C) and relative humidities (80 ∼ 90%) for up to 240 hr. With increasing temperature and humidity, the sheet resistance of the GZO thin films increased to a maximum of 14.2% at 65 °C/90% RH. The changes of surface morphology caused by damp heat were drastic and were comparable to the degradation caused by high temperature only. The effect of damp heat is discussed based on the electrical and the structural characterizations.
Original language | English |
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Pages (from-to) | 1081-1085 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 57 |
Issue number | 41 |
DOIs | |
Publication status | Published - 2010 Oct 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)