The transfer of two-dimensional (2D) materials is crucial to the realization of 2D material-based devices for practical applications. The thinness of 2D materials renders them prone to mechanical damage during the transfer process and to degradation of their superior electrical and mechanical properties. Herein, the mechanisms involved in the damage of chemical vapor deposition-grown graphene (Gr) and MoS2 are investigated during a roll-based transfer process. We identify two different damage mechanisms, i.e., instability-induced damage and tensile strain-induced damage. The two mechanisms compete, depending on the thickness of the transfer medium, and induce dissimilar damage. By minimizing these two mechanisms, we realize and demonstrate the damage-free transfer of 2D materials. The sheet resistance and mobility of transferred Gr are 235 ± 29 Ω sq–1 and 2250 cm2 V–1 s–1, respectively, with no microscopic cracks or tear-out damage. We observe instability-induced damage to be ubiquitous in monolayer MoS2, thin metals, and thin oxide films. By understanding the instability-induced damage mechanism, a broad range of 2D materials and thin films can be transferred without mechanical damage. Damage-free transfer will contribute to the high-yield fabrication of 2D material-based electronic devices.
Bibliographical noteFunding Information:
This work was supported by the Center for Advanced Meta-Materials (CAMM), which is funded by the Ministry of Science, ICT, and Future Planning as a Global Frontier Project (CAMM No. 2014063701, 2014063700), and by the Korea Institute of Energy Technology Evaluation and Planning (KETEP, No. 20183010014310), which is funded by the Ministry of Trade, Industry, and Energy (MOTIE) of the Republic of Korea. This work was also supported by an internal research program of the Korean Institute of Machinery and Materials (NK224D).
© 2021, The Author(s).
All Science Journal Classification (ASJC) codes
- Modelling and Simulation
- Materials Science(all)
- Condensed Matter Physics