We have investigated the Ohmic contact formation mechanism of Si/Ti-based contacts to n-GaN. The Si/Ti contact system was selected because Ti silicides have a low work function and also Si has been used widely as an n-type dopant. Our experimental results show that the Ohmic behavior of Si/Ti-based contacts were attributed to the low barrier height of the Ti silicide/GaN interface. The contact resistance of Si/Ti-based Ohmic contacts decreased exponentially with the measuring temperature. It can be concluded that current flows over the low barrier height by thermionic emission.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2000 Aug 14|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)