Abstract
We have investigated the Ohmic contact formation mechanism of Si/Ti-based contacts to n-GaN. The Si/Ti contact system was selected because Ti silicides have a low work function and also Si has been used widely as an n-type dopant. Our experimental results show that the Ohmic behavior of Si/Ti-based contacts were attributed to the low barrier height of the Ti silicide/GaN interface. The contact resistance of Si/Ti-based Ohmic contacts decreased exponentially with the measuring temperature. It can be concluded that current flows over the low barrier height by thermionic emission.
| Original language | English |
|---|---|
| Pages (from-to) | 1011-1013 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 77 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2000 Aug 14 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)