Crystallization of amorphous Si thin films by the reaction of MoO 3/Al nanoengineered thermite

Jung Hyeon Bae, Do Kyung Kim, Tae Hoon Jeong, Hyun Jae Kim

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12 Citations (Scopus)


In this work, we investigated a new crystallization method for amorphous silicon (a-Si) using a mixture of nano-energetic materials: molybdenum oxide and aluminum (MoO3/Al). The purpose of using nano-energetic materials is to improve the performance of a-Si films with a self-propagating exothermic reaction over a period of microseconds without any substrate damage. The mixture of MoO3/Al nanopowders was used for a thermite reaction for crystallization of a-Si thin films. Characterization results showed that a-Si thin films were successfully crystallized to poly-Si as evidenced by a Raman peak near 519 cm- 1. The crystalline volume fraction of poly-Si after the nanoengineered thermite reaction was about 94.7% and poly-Si grains was uniformly distributed with an average grain size of around 40-50 nm. These results indicate that high quality poly-Si thin films were successfully prepared on the substrate.

Original languageEnglish
Pages (from-to)6205-6209
Number of pages5
JournalThin Solid Films
Issue number22
Publication statusPublished - 2010 Sept 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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