Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

Myoung Sub Kim, Sung Hyuk Cho, Suk Kyoung Hong, Jae Sung Roh, Doo Jin Choi

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


The Sb2Te3 film is an attractive candidate for phase change random access memory (PRAM) due to its rapid crystallization speed. However, the Sb2Te3 film has unstable amorphous phase. In order to improve the phase stability and easy reamorphization, the nitrogen-doped Sb2Te3 films were proposed. The characteristics of nitrogen-doped Sb2Te3 films were investigated using the secondary ion mass spectroscopy (SIMS), 4-point probe technique, X-ray diffraction and static test. The nitrogen doping caused the increase of crystallization temperature and sheet resistance of the Sb2Te3 films. Furthermore, the crystallization speed of nitrogen-doped Sb2Te3 film was superior to the Ge2Sb2Te5 film.

Original languageEnglish
Pages (from-to)1043-1046
Number of pages4
JournalCeramics International
Issue number4
Publication statusPublished - 2008 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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