Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

Myoung Sub Kim; Sung Hyuk Cho; Suk Kyoung Hong; Jae Sung Roh; Doo Jin Choi

doi:10.1016/j.ceramint.2007.09.078

Crystallization characteristics of nitrogen-doped Sb₂Te₃ films for PRAM application

Myoung Sub Kim, Sung Hyuk Cho, Suk Kyoung Hong, Jae Sung Roh, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The Sb₂Te₃ film is an attractive candidate for phase change random access memory (PRAM) due to its rapid crystallization speed. However, the Sb₂Te₃ film has unstable amorphous phase. In order to improve the phase stability and easy reamorphization, the nitrogen-doped Sb₂Te₃ films were proposed. The characteristics of nitrogen-doped Sb₂Te₃ films were investigated using the secondary ion mass spectroscopy (SIMS), 4-point probe technique, X-ray diffraction and static test. The nitrogen doping caused the increase of crystallization temperature and sheet resistance of the Sb₂Te₃ films. Furthermore, the crystallization speed of nitrogen-doped Sb₂Te₃ film was superior to the Ge₂Sb₂Te₅ film.

Original language	English
Pages (from-to)	1043-1046
Number of pages	4
Journal	Ceramics International
Volume	34
Issue number	4
DOIs	https://doi.org/10.1016/j.ceramint.2007.09.078
Publication status	Published - 2008 May

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2007.09.078

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title = "Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application",

abstract = "The Sb2Te3 film is an attractive candidate for phase change random access memory (PRAM) due to its rapid crystallization speed. However, the Sb2Te3 film has unstable amorphous phase. In order to improve the phase stability and easy reamorphization, the nitrogen-doped Sb2Te3 films were proposed. The characteristics of nitrogen-doped Sb2Te3 films were investigated using the secondary ion mass spectroscopy (SIMS), 4-point probe technique, X-ray diffraction and static test. The nitrogen doping caused the increase of crystallization temperature and sheet resistance of the Sb2Te3 films. Furthermore, the crystallization speed of nitrogen-doped Sb2Te3 film was superior to the Ge2Sb2Te5 film.",

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T1 - Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

AU - Kim, Myoung Sub

AU - Cho, Sung Hyuk

AU - Hong, Suk Kyoung

AU - Roh, Jae Sung

AU - Choi, Doo Jin

PY - 2008/5

Y1 - 2008/5

N2 - The Sb2Te3 film is an attractive candidate for phase change random access memory (PRAM) due to its rapid crystallization speed. However, the Sb2Te3 film has unstable amorphous phase. In order to improve the phase stability and easy reamorphization, the nitrogen-doped Sb2Te3 films were proposed. The characteristics of nitrogen-doped Sb2Te3 films were investigated using the secondary ion mass spectroscopy (SIMS), 4-point probe technique, X-ray diffraction and static test. The nitrogen doping caused the increase of crystallization temperature and sheet resistance of the Sb2Te3 films. Furthermore, the crystallization speed of nitrogen-doped Sb2Te3 film was superior to the Ge2Sb2Te5 film.

AB - The Sb2Te3 film is an attractive candidate for phase change random access memory (PRAM) due to its rapid crystallization speed. However, the Sb2Te3 film has unstable amorphous phase. In order to improve the phase stability and easy reamorphization, the nitrogen-doped Sb2Te3 films were proposed. The characteristics of nitrogen-doped Sb2Te3 films were investigated using the secondary ion mass spectroscopy (SIMS), 4-point probe technique, X-ray diffraction and static test. The nitrogen doping caused the increase of crystallization temperature and sheet resistance of the Sb2Te3 films. Furthermore, the crystallization speed of nitrogen-doped Sb2Te3 film was superior to the Ge2Sb2Te5 film.

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Crystallization characteristics of nitrogen-doped Sb₂Te₃ films for PRAM application

Abstract

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