Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Sang Yeon Lee, Hyungtak Seo, Christopher W. Bielawski, Hi Deok Lee, Jungwoo Oh

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10 Citations (Scopus)


A crystalline beryllium oxide (BeO) film was grown on 4H-silicon carbide (4H-SiC) via thermal atomic layer deposition (ALD). Diethylberyllium and water were used as key precursors. The growth rate of BeO corresponded to 0.8 Å/cycle over the temperature range of 150-200 °C. Transmission electron microscopy and X-ray diffraction of BeO/4H-SiC demonstrated that wurtzite BeO (0002) was grown on 4H-SiC (0001) substrate. The average crystallite sizes of BeO were 15-16 nm, and the compressive strain was applied to the BeO film in the out-of-plane direction. The band alignment and interface defects of BeO/4H-SiC were determined by using internal photoemission spectroscopy (IPE), ultraviolet photoelectron spectroscopy (UPS), and reflection electron energy loss spectroscopy (REELS). The conduction band offset (CBO), valence band offset (VBO), and energy bandgap of 4H-SiC and BeO corresponded to 2.28 ± 0.1 eV, 2.53 ± 0.01 eV, 3.16 ± 0.1 eV, and 8.3 ± 0.05 eV, respectively. The calculated bandgap (7.97 eV) of a thin BeO film was obtained from the sum of CBO (2.28 eV), VBO (2.53 eV), and the SiC bandgap (3.16 eV). The difference between the calculated (7.97 eV) and REELS (8.3 eV) bandgaps of BeO film is due to the error bars between the analysis methods. Interface defect levels, as determined via IPE analysis, corresponded to 3.53 ± 0.1 eV (graphitic carbon) and 4.46 ± 0.1 eV (π-bonded carbon) and were formed during the ohmic annealing process.

Original languageEnglish
Pages (from-to)617-624
Number of pages8
JournalACS Applied Electronic Materials
Issue number4
Publication statusPublished - 2019 Apr 23

Bibliographical note

Funding Information:
The study was supported by the MIST (Ministry of Science and ICT), Korea, under the “ICT Consilience Creative Program” (IITP-2018-2017-0-01015) supervised by the IITP (Institute for Information & Communications Technology Promotion) and by the Korea Electric Power Corporation (under Grant 3: R18XA06-03). The study was supported by the Future Semiconductor Device Technology Development Program (10048536) funded by the MOTIE (Ministry of Trade, Industry, & Energy) and the KSRC (Korea Semiconductor Research Consortium). Additionally, J.H.Y., E..S.L., and C.W.B. are grateful to the Institute for Basic Science (IBS-R019-D1) as well as the BK21 Plus Program funded by the Ministry of Education and the National Research Foundation of Korea for their support.

Publisher Copyright:
Copyright © 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrochemistry
  • Materials Chemistry


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