Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

Mi Jang; Ji Hoon Park; Seongil Im; Se Hyun Kim; Hoichang Yang

doi:10.1002/adma.201303388

Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

Mi Jang, Ji Hoon Park, Seongil Im, Se Hyun Kim, Hoichang Yang

Department of Physics

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm^-2), polystyrene-grafted SiO₂ could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μ_FET ≈ 1.3 cm²V ^-1 s^-1, V_th ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.

Original language	English
Pages (from-to)	288-292
Number of pages	5
Journal	Advanced Materials
Volume	26
Issue number	2
DOIs	https://doi.org/10.1002/adma.201303388
Publication status	Published - 2014 Jan 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm-2), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm2V -1 s-1, Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.",

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AU - Jang, Mi

AU - Park, Ji Hoon

AU - Im, Seongil

AU - Kim, Se Hyun

AU - Yang, Hoichang

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AB - Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm-2), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm2V -1 s-1, Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.

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Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors

Abstract

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