We reported on the fabrication of depletion-load-type ZnO thin film transistor (TFT) inverters coupling top- and bottom-gate TFTs that have 20 nm thin Al2O3 dielectrics grown by atomic layer deposition. Because the top-gate ZnO TFT showed a lower field-effect mobility of 0.1 cm 2 /V s than that of the bottom-gate device (2.4 cm2 /V s), we used the top- and bottom-gate structures as driver and load transistors, respectively, to adjust the transition voltage of the inverter with an identical width/length dimension for both TFTs. Our ZnO inverter demonstrated an excellent voltage gain of ∼41 at a low supply voltage of 5 V.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2010|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering