Coupling of semiconductor nanowires with neurons and their interfacial structure

Ki Young Lee; Sojung Shim; Il Soo Kim; Hwangyou Oh; Sunoh Kim; Jae Pyeong Ahn; Seung Han Park; Hyewhon Rhim; Heon Jin Choi

doi:10.1007/s11671-009-9498-0

Coupling of semiconductor nanowires with neurons and their interfacial structure

Ki Young Lee, Sojung Shim, Il Soo Kim, Hwangyou Oh, Sunoh Kim, Jae Pyeong Ahn, Seung Han Park, Hyewhon Rhim, Heon Jin Choi

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron-nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft.

Original language	English
Pages (from-to)	410-415
Number of pages	6
Journal	Nanoscale Research Letters
Volume	5
Issue number	2
DOIs	https://doi.org/10.1007/s11671-009-9498-0
Publication status	Published - 2010 Feb

Bibliographical note

Funding Information:
Acknowledgments This research was supported by a grant from the National Research Laboratory program (R0A-2007-000-20075-0) and Pioneer research program (2009-008-1529) for converging technology through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science & Technology.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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10.1007/s11671-009-9498-0

Cite this

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abstract = "We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron-nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft.",

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AU - Lee, Ki Young

AU - Shim, Sojung

AU - Kim, Il Soo

AU - Oh, Hwangyou

AU - Kim, Sunoh

AU - Ahn, Jae Pyeong

AU - Park, Seung Han

AU - Rhim, Hyewhon

AU - Choi, Heon Jin

N1 - Funding Information: Acknowledgments This research was supported by a grant from the National Research Laboratory program (R0A-2007-000-20075-0) and Pioneer research program (2009-008-1529) for converging technology through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science & Technology.

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N2 - We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron-nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft.

AB - We report on the compatibility of various nanowires with hippocampal neurons and the structural study of the neuron-nanowire interface. Si, Ge, SiGe, and GaN nanowires are compatible with hippocampal neurons due to their native oxide, but ZnO nanowires are toxic to neuron due to a release of Zn ion. The interfaces of fixed Si nanowire and hippocampal neuron, cross-sectional samples, were prepared by focused ion beam and observed by transmission electron microscopy. The results showed that the processes of neuron were adhered well on the nanowire without cleft.

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Coupling of semiconductor nanowires with neurons and their interfacial structure

Abstract

Bibliographical note

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