Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires

Chihun In; Jungmok Seo; Hyukho Kwon; Jeongmook Choi; Sangwan Sim; Jaeseok Kim; Taeyong Kim; Taeyoon Lee; Hyunyong Choi

doi:10.1109/TTHZ.2015.2428619

Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires

Chihun In, Jungmok Seo, Hyukho Kwon, Jeongmook Choi, Sangwan Sim, Jaeseok Kim, Taeyong Kim, Taeyoon Lee, Hyunyong Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The surface-trap mediated carrier recombination is a crucial feature in characterizing the optoelectronic properties of nanowires (NWs). Due to the one-dimensional characteristics, the photoexcited carriers experiences μltiple carrier interactions in the transverse direction such that strong carrier-carrier interactions are expected to play an important role in the NW carrier recombination. Here, using ultrafast optical-pump and terahertz-probe spectroscopy, we show that the Auger scattering significantly reduces the trap-mediated decay process. Systematic studies on bulk Si, bundled, individual, and encapsulated (reduced surface-trap density) SiNWs reveal that the effect of Auger recombination exhibits strong pump-fluence dependence depending on the surface-treatment condition.

Original language	English
Article number	7109945
Pages (from-to)	605-612
Number of pages	8
Journal	IEEE Transactions on Terahertz Science and Technology
Volume	5
Issue number	4
DOIs	https://doi.org/10.1109/TTHZ.2015.2428619
Publication status	Published - 2015 Jul 1

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

All Science Journal Classification (ASJC) codes

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/TTHZ.2015.2428619

Cite this

@article{410f38f7d68f4c77ba62197bd10401f7,

title = "Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires",

abstract = "The surface-trap mediated carrier recombination is a crucial feature in characterizing the optoelectronic properties of nanowires (NWs). Due to the one-dimensional characteristics, the photoexcited carriers experiences μltiple carrier interactions in the transverse direction such that strong carrier-carrier interactions are expected to play an important role in the NW carrier recombination. Here, using ultrafast optical-pump and terahertz-probe spectroscopy, we show that the Auger scattering significantly reduces the trap-mediated decay process. Systematic studies on bulk Si, bundled, individual, and encapsulated (reduced surface-trap density) SiNWs reveal that the effect of Auger recombination exhibits strong pump-fluence dependence depending on the surface-treatment condition.",

author = "Chihun In and Jungmok Seo and Hyukho Kwon and Jeongmook Choi and Sangwan Sim and Jaeseok Kim and Taeyong Kim and Taeyoon Lee and Hyunyong Choi",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2015",

month = jul,

day = "1",

doi = "10.1109/TTHZ.2015.2428619",

language = "English",

volume = "5",

pages = "605--612",

journal = "IEEE Transactions on Terahertz Science and Technology",

issn = "2156-342X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires

AU - In, Chihun

AU - Seo, Jungmok

AU - Kwon, Hyukho

AU - Choi, Jeongmook

AU - Sim, Sangwan

AU - Kim, Jaeseok

AU - Kim, Taeyong

AU - Lee, Taeyoon

AU - Choi, Hyunyong

PY - 2015/7/1

Y1 - 2015/7/1

N2 - The surface-trap mediated carrier recombination is a crucial feature in characterizing the optoelectronic properties of nanowires (NWs). Due to the one-dimensional characteristics, the photoexcited carriers experiences μltiple carrier interactions in the transverse direction such that strong carrier-carrier interactions are expected to play an important role in the NW carrier recombination. Here, using ultrafast optical-pump and terahertz-probe spectroscopy, we show that the Auger scattering significantly reduces the trap-mediated decay process. Systematic studies on bulk Si, bundled, individual, and encapsulated (reduced surface-trap density) SiNWs reveal that the effect of Auger recombination exhibits strong pump-fluence dependence depending on the surface-treatment condition.

AB - The surface-trap mediated carrier recombination is a crucial feature in characterizing the optoelectronic properties of nanowires (NWs). Due to the one-dimensional characteristics, the photoexcited carriers experiences μltiple carrier interactions in the transverse direction such that strong carrier-carrier interactions are expected to play an important role in the NW carrier recombination. Here, using ultrafast optical-pump and terahertz-probe spectroscopy, we show that the Auger scattering significantly reduces the trap-mediated decay process. Systematic studies on bulk Si, bundled, individual, and encapsulated (reduced surface-trap density) SiNWs reveal that the effect of Auger recombination exhibits strong pump-fluence dependence depending on the surface-treatment condition.

UR - http://www.scopus.com/inward/record.url?scp=85028232158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028232158&partnerID=8YFLogxK

U2 - 10.1109/TTHZ.2015.2428619

DO - 10.1109/TTHZ.2015.2428619

M3 - Article

AN - SCOPUS:85028232158

SN - 2156-342X

VL - 5

SP - 605

EP - 612

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

IS - 4

M1 - 7109945

ER -

Counterbalanced Effect of Surface Trap and Auger Recombination on the Transverse Terahertz Carrier Dynamics in Silicon Nanowires

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this