Co2MnSi Heusler alloy as an enhancing layer of perpendicular magnetic anisotropy for MgO-based magnetic tunnel junctions with L10 ordered FePd

Taejin Bae; Jungho Ko; Sangho Lee; Jongin Cha; Jongill Hong

doi:10.7567/JJAP.55.013001

Co₂MnSi Heusler alloy as an enhancing layer of perpendicular magnetic anisotropy for MgO-based magnetic tunnel junctions with L1₀ ordered FePd

Taejin Bae, Jungho Ko, Sangho Lee, Jongin Cha, Jongill Hong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Ultra-thin Co₂MnSi Heusler alloy improves perpendicular magnetic anisotropy of FePd in an MgO-based magnetic tunnel junction after annealing it just once at a temperature of as low as 400 °C. Co₂MnSi as thin as 1.0nm inserted between MgO and FePd facilitated phase-transformation of 3-nm-thick FePd to ordered L1₀ and led a change in magnetic anisotropy to perpendicular-to-the-plane. To make it even better, FePd also helped the phase-transformation of Co₂MnSi to ordered B2 known to have high spin polarization, which makes the L1₀ FePd/B2 Co₂MnSi bilayer promising for perpendicular-magnetic tunnel junction and improving both thermal stability and tunnel magnetoresistance.

Original language	English
Article number	013001
Journal	Japanese journal of applied physics
Volume	55
Issue number	1
DOIs	https://doi.org/10.7567/JJAP.55.013001
Publication status	Published - 2016 Jan

Bibliographical note

Funding Information:
The authors thank Dr. Hyun Hwi Lee (PAL) and Dr. Jin-Gyu Kim (KBSI) for help with discussion about the microstructure and Ube Material Industries, Ltd. in Japan for their support in providing an MgO sputtering target of high quality. This research was supported by the Future Semiconductor Device Technology Development Program (10044723) funded by Ministry of Trade, Industry and Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC), the industry-university cooperation project of the SK Hynix Semiconductor Inc., and Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education (No. 2013R1A1A2013745 and No. 2014R1A2A1A11050290).

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.55.013001

Cite this

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title = "Co2MnSi Heusler alloy as an enhancing layer of perpendicular magnetic anisotropy for MgO-based magnetic tunnel junctions with L10 ordered FePd",

abstract = "Ultra-thin Co2MnSi Heusler alloy improves perpendicular magnetic anisotropy of FePd in an MgO-based magnetic tunnel junction after annealing it just once at a temperature of as low as 400 °C. Co2MnSi as thin as 1.0nm inserted between MgO and FePd facilitated phase-transformation of 3-nm-thick FePd to ordered L10 and led a change in magnetic anisotropy to perpendicular-to-the-plane. To make it even better, FePd also helped the phase-transformation of Co2MnSi to ordered B2 known to have high spin polarization, which makes the L10 FePd/B2 Co2MnSi bilayer promising for perpendicular-magnetic tunnel junction and improving both thermal stability and tunnel magnetoresistance.",

author = "Taejin Bae and Jungho Ko and Sangho Lee and Jongin Cha and Jongill Hong",

note = "Funding Information: The authors thank Dr. Hyun Hwi Lee (PAL) and Dr. Jin-Gyu Kim (KBSI) for help with discussion about the microstructure and Ube Material Industries, Ltd. in Japan for their support in providing an MgO sputtering target of high quality. This research was supported by the Future Semiconductor Device Technology Development Program (10044723) funded by Ministry of Trade, Industry and Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC), the industry-university cooperation project of the SK Hynix Semiconductor Inc., and Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education (No. 2013R1A1A2013745 and No. 2014R1A2A1A11050290). Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

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AU - Bae, Taejin

AU - Ko, Jungho

AU - Lee, Sangho

AU - Cha, Jongin

AU - Hong, Jongill

N1 - Funding Information: The authors thank Dr. Hyun Hwi Lee (PAL) and Dr. Jin-Gyu Kim (KBSI) for help with discussion about the microstructure and Ube Material Industries, Ltd. in Japan for their support in providing an MgO sputtering target of high quality. This research was supported by the Future Semiconductor Device Technology Development Program (10044723) funded by Ministry of Trade, Industry and Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC), the industry-university cooperation project of the SK Hynix Semiconductor Inc., and Basic Science Research Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Education (No. 2013R1A1A2013745 and No. 2014R1A2A1A11050290). Publisher Copyright: © 2016 The Japan Society of Applied Physics.

PY - 2016/1

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N2 - Ultra-thin Co2MnSi Heusler alloy improves perpendicular magnetic anisotropy of FePd in an MgO-based magnetic tunnel junction after annealing it just once at a temperature of as low as 400 °C. Co2MnSi as thin as 1.0nm inserted between MgO and FePd facilitated phase-transformation of 3-nm-thick FePd to ordered L10 and led a change in magnetic anisotropy to perpendicular-to-the-plane. To make it even better, FePd also helped the phase-transformation of Co2MnSi to ordered B2 known to have high spin polarization, which makes the L10 FePd/B2 Co2MnSi bilayer promising for perpendicular-magnetic tunnel junction and improving both thermal stability and tunnel magnetoresistance.

AB - Ultra-thin Co2MnSi Heusler alloy improves perpendicular magnetic anisotropy of FePd in an MgO-based magnetic tunnel junction after annealing it just once at a temperature of as low as 400 °C. Co2MnSi as thin as 1.0nm inserted between MgO and FePd facilitated phase-transformation of 3-nm-thick FePd to ordered L10 and led a change in magnetic anisotropy to perpendicular-to-the-plane. To make it even better, FePd also helped the phase-transformation of Co2MnSi to ordered B2 known to have high spin polarization, which makes the L10 FePd/B2 Co2MnSi bilayer promising for perpendicular-magnetic tunnel junction and improving both thermal stability and tunnel magnetoresistance.

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