Corrigendum: Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode (Nanotechnology (2019) 30 (035207) DOI: 10.1088/1361-6528/aaed98)

Yeon Ju Lee; Hong Hee Kim; Yun Jae Lee; Jung Hyuk Kim; Heon Jin Choi; Won Kook Choi

doi:10.1088/1361-6528/ab209c

Corrigendum: Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode (Nanotechnology (2019) 30 (035207) DOI: 10.1088/1361-6528/aaed98)

Yeon Ju Lee, Hong Hee Kim, Yun Jae Lee, Jung Hyuk Kim, Heon Jin Choi, Won Kook Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

the fifth to sixth line from the bottom, on the right-hand column of page 6 of the published paper, there is a mistake in the calculation of the donor concentration made during unit conversion. The donor concentration (ND) values obtained from equation (6) were miscalculated as 2.34 × 10²¹ cm^-3 for ZnO-60, 3.52 × 10²¹ cm^-3 for ZnO-90, and 6.94 × 10²¹ cm^-3 for ZnO-140. Therefore, the values change as follows: 'Calculated values are N_D = 2.41 × 10¹⁹ cm^-3 for ZnO- 60, 3.63 × 10¹⁹ cm^-3 for ZnO-90, and 7.14 × 1019 cm^-3 for ZnO-140.'

Original language	English
Article number	369501
Journal	Nanotechnology
Volume	30
Issue number	36
DOIs	https://doi.org/10.1088/1361-6528/ab209c
Publication status	Published - 2019 Jun 20

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Publisher Copyright:
© 2019 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/1361-6528/ab209c

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Lee, Y. J., Kim, H. H., Lee, Y. J., Kim, J. H., Choi, H. J., & Choi, W. K. (2019). Corrigendum: Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode (Nanotechnology (2019) 30 (035207) DOI: 10.1088/1361-6528/aaed98). Nanotechnology, 30(36), Article 369501. https://doi.org/10.1088/1361-6528/ab209c

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title = "Corrigendum: Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode (Nanotechnology (2019) 30 (035207) DOI: 10.1088/1361-6528/aaed98)",

abstract = "the fifth to sixth line from the bottom, on the right-hand column of page 6 of the published paper, there is a mistake in the calculation of the donor concentration made during unit conversion. The donor concentration (ND) values obtained from equation (6) were miscalculated as 2.34 × 1021 cm-3 for ZnO-60, 3.52 × 1021 cm-3 for ZnO-90, and 6.94 × 1021 cm-3 for ZnO-140. Therefore, the values change as follows: 'Calculated values are ND = 2.41 × 1019 cm-3 for ZnO- 60, 3.63 × 1019 cm-3 for ZnO-90, and 7.14 × 1019 cm-3 for ZnO-140.'",

author = "Lee, {Yeon Ju} and Kim, {Hong Hee} and Lee, {Yun Jae} and Kim, {Jung Hyuk} and Choi, {Heon Jin} and Choi, {Won Kook}",

note = "Publisher Copyright: {\textcopyright} 2019 IOP Publishing Ltd.",

year = "2019",

month = jun,

day = "20",

doi = "10.1088/1361-6528/ab209c",

language = "English",

volume = "30",

journal = "Nanotechnology",

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Lee, YJ, Kim, HH, Lee, YJ, Kim, JH, Choi, HJ & Choi, WK 2019, 'Corrigendum: Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode (Nanotechnology (2019) 30 (035207) DOI: 10.1088/1361-6528/aaed98)', Nanotechnology, vol. 30, no. 36, 369501. https://doi.org/10.1088/1361-6528/ab209c

Corrigendum: Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode (Nanotechnology (2019) 30 (035207) DOI: 10.1088/1361-6528/aaed98). / Lee, Yeon Ju; Kim, Hong Hee; Lee, Yun Jae et al.
In: Nanotechnology, Vol. 30, No. 36, 369501, 20.06.2019.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Corrigendum

T2 - Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode (Nanotechnology (2019) 30 (035207) DOI: 10.1088/1361-6528/aaed98)

AU - Lee, Yeon Ju

AU - Kim, Hong Hee

AU - Lee, Yun Jae

AU - Kim, Jung Hyuk

AU - Choi, Heon Jin

AU - Choi, Won Kook

PY - 2019/6/20

Y1 - 2019/6/20

N2 - the fifth to sixth line from the bottom, on the right-hand column of page 6 of the published paper, there is a mistake in the calculation of the donor concentration made during unit conversion. The donor concentration (ND) values obtained from equation (6) were miscalculated as 2.34 × 1021 cm-3 for ZnO-60, 3.52 × 1021 cm-3 for ZnO-90, and 6.94 × 1021 cm-3 for ZnO-140. Therefore, the values change as follows: 'Calculated values are ND = 2.41 × 1019 cm-3 for ZnO- 60, 3.63 × 1019 cm-3 for ZnO-90, and 7.14 × 1019 cm-3 for ZnO-140.'

AB - the fifth to sixth line from the bottom, on the right-hand column of page 6 of the published paper, there is a mistake in the calculation of the donor concentration made during unit conversion. The donor concentration (ND) values obtained from equation (6) were miscalculated as 2.34 × 1021 cm-3 for ZnO-60, 3.52 × 1021 cm-3 for ZnO-90, and 6.94 × 1021 cm-3 for ZnO-140. Therefore, the values change as follows: 'Calculated values are ND = 2.41 × 1019 cm-3 for ZnO- 60, 3.63 × 1019 cm-3 for ZnO-90, and 7.14 × 1019 cm-3 for ZnO-140.'

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DO - 10.1088/1361-6528/ab209c

M3 - Comment/debate

AN - SCOPUS:85068647821

SN - 0957-4484

VL - 30

JO - Nanotechnology

JF - Nanotechnology

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M1 - 369501

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Corrigendum: Electron transport phenomena at the interface of Al electrode and heavily doped degenerate ZnO nanoparticles in quantum dot light emitting diode (Nanotechnology (2019) 30 (035207) DOI: 10.1088/1361-6528/aaed98)

Abstract

Bibliographical note

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