Abstract
We report a comparative study on the interface states of pentacene thin-film transistors (TFTs) with ultraviolet (UV) illumination. The trap density (negative fixed charge) at the pentacene/poly-4-vynylphenol (PVP) interface of the TFT adopting UV-treated poly-4-vynylphenol (PVP) layers (prior to pentacene deposition) can be estimated at 1.75 × 1012/cm2 while another UV-treated TFT (after pentacene deposition) displays higher trap density of 2.40 × 1012/cm2 due to the additional negative charges at the interface generated from pentacene channel layers through UV treatment. It can lead to the formation of more conductive channels and thus effectively modulate the threshold voltage (VT). In addition, we fabricated the resistance-load inverter showing improved performance through UV treatment using load-line analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 1689-1693 |
| Number of pages | 5 |
| Journal | Synthetic Metals |
| Volume | 159 |
| Issue number | 15-16 |
| DOIs | |
| Publication status | Published - 2009 Aug |
Bibliographical note
Funding Information:This research was performed with the financial support a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. The authors also acknowledge the support from Seoul Science Fellowship and Brain Korea 21 Project.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry