Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CN                         x                         ) film in magnetron sputtering

Hae Suk Jung; Hyung Ho Park

doi:10.1016/S0169-4332(03)00507-5

Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CN _x ) film in magnetron sputtering

Hae Suk Jung, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The growth and structural evolution of the carbon nitride (CN _x ) film, deposited by rf magnetron sputtering in Ar/N ₂ discharge, were studied. The CN _x (0.23≤x≤0.71) films were deposited on Si(1 0 0) at rf power between 50 and 250W. Simultaneously, Ar/N ₂ gas ratio was varied from 0 to 18 with total pressure kept at 6.6 × 10 ^-1 Pa. The composition, structure, and chemical bonding configuration of the CN _x films were found to be strongly dependent on deposition parameters (rf power and Ar/N ₂ gas ratio). Based on these results, a relationship between deposition parameter and film properties ([N]/[C] ratio, surface roughness, and sp ³ /sp ² bond ratio) was established.

Original language	English
Pages (from-to)	149-155
Number of pages	7
Journal	Applied Surface Science
Volume	216
Issue number	1-4 SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00507-5
Publication status	Published - 2003 Jun 30

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(03)00507-5

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title = " Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CN x ) film in magnetron sputtering ",

abstract = " The growth and structural evolution of the carbon nitride (CN x ) film, deposited by rf magnetron sputtering in Ar/N 2 discharge, were studied. The CN x (0.23≤x≤0.71) films were deposited on Si(1 0 0) at rf power between 50 and 250W. Simultaneously, Ar/N 2 gas ratio was varied from 0 to 18 with total pressure kept at 6.6 × 10 -1 Pa. The composition, structure, and chemical bonding configuration of the CN x films were found to be strongly dependent on deposition parameters (rf power and Ar/N 2 gas ratio). Based on these results, a relationship between deposition parameter and film properties ([N]/[C] ratio, surface roughness, and sp 3 /sp 2 bond ratio) was established.",

author = "Jung, {Hae Suk} and Park, {Hyung Ho}",

year = "2003",

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journal = "Applied Surface Science",

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Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CN _x ) film in magnetron sputtering . / Jung, Hae Suk; Park, Hyung Ho.
In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 149-155.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CN x ) film in magnetron sputtering

AU - Jung, Hae Suk

AU - Park, Hyung Ho

PY - 2003/6/30

Y1 - 2003/6/30

N2 - The growth and structural evolution of the carbon nitride (CN x ) film, deposited by rf magnetron sputtering in Ar/N 2 discharge, were studied. The CN x (0.23≤x≤0.71) films were deposited on Si(1 0 0) at rf power between 50 and 250W. Simultaneously, Ar/N 2 gas ratio was varied from 0 to 18 with total pressure kept at 6.6 × 10 -1 Pa. The composition, structure, and chemical bonding configuration of the CN x films were found to be strongly dependent on deposition parameters (rf power and Ar/N 2 gas ratio). Based on these results, a relationship between deposition parameter and film properties ([N]/[C] ratio, surface roughness, and sp 3 /sp 2 bond ratio) was established.

AB - The growth and structural evolution of the carbon nitride (CN x ) film, deposited by rf magnetron sputtering in Ar/N 2 discharge, were studied. The CN x (0.23≤x≤0.71) films were deposited on Si(1 0 0) at rf power between 50 and 250W. Simultaneously, Ar/N 2 gas ratio was varied from 0 to 18 with total pressure kept at 6.6 × 10 -1 Pa. The composition, structure, and chemical bonding configuration of the CN x films were found to be strongly dependent on deposition parameters (rf power and Ar/N 2 gas ratio). Based on these results, a relationship between deposition parameter and film properties ([N]/[C] ratio, surface roughness, and sp 3 /sp 2 bond ratio) was established.

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JF - Applied Surface Science

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Correlation between deposition parameters and structural modification of amorphous carbon nitride (a-CN _x ) film in magnetron sputtering

Abstract

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