Correlation between alkaline-earth-metal dopants and threshold voltage (Vth) stability of solution-processed gallium indium oxide thin film transistors

Jee Ho Park; Young Bum Yoo; Jin Young Oh; Tae Il Lee; Se Jong Lee; Hong Koo Baik

doi:10.1007/s10971-014-3560-9

Correlation between alkaline-earth-metal dopants and threshold voltage (V_th) stability of solution-processed gallium indium oxide thin film transistors

Jee Ho Park, Young Bum Yoo, Jin Young Oh, Tae Il Lee, Se Jong Lee, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (V_th) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the V_th stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest V_th stability under positive gate bias and the origin of V_th stability enhancement is deduced by using the partial charge model and reaction kinetics.

Original language	English
Pages (from-to)	260-264
Number of pages	5
Journal	Journal of Sol-Gel Science and Technology
Volume	73
Issue number	1
DOIs	https://doi.org/10.1007/s10971-014-3560-9
Publication status	Published - 2014 Jan

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF 2014017949, 2010-0029207), funded by Korea Ministry of Science, ICT & Future Planning (MSIP). Further funding was provided by LG Display.

Publisher Copyright:
© 2014, Springer Science+Business Media New York.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Biomaterials
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1007/s10971-014-3560-9

Cite this

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title = "Correlation between alkaline-earth-metal dopants and threshold voltage (Vth) stability of solution-processed gallium indium oxide thin film transistors",

abstract = "We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (Vth) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the Vth stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest Vth stability under positive gate bias and the origin of Vth stability enhancement is deduced by using the partial charge model and reaction kinetics.",

author = "Park, {Jee Ho} and Yoo, {Young Bum} and Oh, {Jin Young} and Lee, {Tae Il} and Lee, {Se Jong} and Baik, {Hong Koo}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF 2014017949, 2010-0029207), funded by Korea Ministry of Science, ICT & Future Planning (MSIP). Further funding was provided by LG Display. Publisher Copyright: {\textcopyright} 2014, Springer Science+Business Media New York.",

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AU - Oh, Jin Young

AU - Lee, Tae Il

AU - Lee, Se Jong

AU - Baik, Hong Koo

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF 2014017949, 2010-0029207), funded by Korea Ministry of Science, ICT & Future Planning (MSIP). Further funding was provided by LG Display. Publisher Copyright: © 2014, Springer Science+Business Media New York.

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N2 - We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (Vth) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the Vth stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest Vth stability under positive gate bias and the origin of Vth stability enhancement is deduced by using the partial charge model and reaction kinetics.

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