Correction to: Complementary Type Ferroelectric Memory Transistor Circuits with P- and N-Channel MoTe 2 (Advanced Electronic Materials, (2020), 6, 9, (2000479), 10.1002/aelm.202000479)

Sungjae Hong; Kang Lib Kim; Yongjae Cho; Hyunmin Cho; Ji Hoon Park; Cheolmin Park; Seongil Im

doi:10.1002/aelm.202000906

Correction to: Complementary Type Ferroelectric Memory Transistor Circuits with P- and N-Channel MoTe 2 (Advanced Electronic Materials, (2020), 6, 9, (2000479), 10.1002/aelm.202000479)

Sungjae Hong, Kang Lib Kim, Yongjae Cho, Hyunmin Cho, Ji Hoon Park, Cheolmin Park, Seongil Im

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

Adv. Electron. Mater. 2020, 6, 2000479 https://doi.org/10.1002/aelm.202000479 This is an error in the acknowledgements of this manuscript. The correct acknowledgements are reproduced below. S.H. and K.L.K. contributed equally to this work. The authors acknowledge the financial support from the National Research Foundation of Korea (NRF) (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). The authors also acknowledge the financial support from NRF, funded by Korean government (MEST) (No. 2018M3D1A1058536). J.H.P. acknowledges this research was supported by Basic Science Research Program through NRF funded by the Ministry of Education (NRF-2019R1I1A1A01063644). S.H. acknowledges the tuition support from the Hyundai Motor Chung Mong-Koo Foundation.

Original language	English
Article number	2000906
Journal	Advanced Electronic Materials
Volume	7
Issue number	5
DOIs	https://doi.org/10.1002/aelm.202000906
Publication status	Published - 2021 May

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Publisher Copyright:
© 2021 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1002/aelm.202000906

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@article{7385d1030ec149359532ca54f1883173,

title = "Correction to: Complementary Type Ferroelectric Memory Transistor Circuits with P- and N-Channel MoTe 2 (Advanced Electronic Materials, (2020), 6, 9, (2000479), 10.1002/aelm.202000479)",

abstract = "Adv. Electron. Mater. 2020, 6, 2000479 https://doi.org/10.1002/aelm.202000479 This is an error in the acknowledgements of this manuscript. The correct acknowledgements are reproduced below. S.H. and K.L.K. contributed equally to this work. The authors acknowledge the financial support from the National Research Foundation of Korea (NRF) (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). The authors also acknowledge the financial support from NRF, funded by Korean government (MEST) (No. 2018M3D1A1058536). J.H.P. acknowledges this research was supported by Basic Science Research Program through NRF funded by the Ministry of Education (NRF-2019R1I1A1A01063644). S.H. acknowledges the tuition support from the Hyundai Motor Chung Mong-Koo Foundation.",

author = "Sungjae Hong and Kim, {Kang Lib} and Yongjae Cho and Hyunmin Cho and Park, {Ji Hoon} and Cheolmin Park and Seongil Im",

note = "Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

month = may,

doi = "10.1002/aelm.202000906",

language = "English",

volume = "7",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "5",

}

Correction to: Complementary Type Ferroelectric Memory Transistor Circuits with P- and N-Channel MoTe 2 (Advanced Electronic Materials, (2020), 6, 9, (2000479), 10.1002/aelm.202000479). / Hong, Sungjae; Kim, Kang Lib; Cho, Yongjae et al.
In: Advanced Electronic Materials, Vol. 7, No. 5, 2000906, 05.2021.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Correction to

T2 - Complementary Type Ferroelectric Memory Transistor Circuits with P- and N-Channel MoTe 2 (Advanced Electronic Materials, (2020), 6, 9, (2000479), 10.1002/aelm.202000479)

AU - Hong, Sungjae

AU - Kim, Kang Lib

AU - Cho, Yongjae

AU - Cho, Hyunmin

AU - Park, Ji Hoon

AU - Park, Cheolmin

AU - Im, Seongil

PY - 2021/5

Y1 - 2021/5

N2 - Adv. Electron. Mater. 2020, 6, 2000479 https://doi.org/10.1002/aelm.202000479 This is an error in the acknowledgements of this manuscript. The correct acknowledgements are reproduced below. S.H. and K.L.K. contributed equally to this work. The authors acknowledge the financial support from the National Research Foundation of Korea (NRF) (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). The authors also acknowledge the financial support from NRF, funded by Korean government (MEST) (No. 2018M3D1A1058536). J.H.P. acknowledges this research was supported by Basic Science Research Program through NRF funded by the Ministry of Education (NRF-2019R1I1A1A01063644). S.H. acknowledges the tuition support from the Hyundai Motor Chung Mong-Koo Foundation.

AB - Adv. Electron. Mater. 2020, 6, 2000479 https://doi.org/10.1002/aelm.202000479 This is an error in the acknowledgements of this manuscript. The correct acknowledgements are reproduced below. S.H. and K.L.K. contributed equally to this work. The authors acknowledge the financial support from the National Research Foundation of Korea (NRF) (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center). The authors also acknowledge the financial support from NRF, funded by Korean government (MEST) (No. 2018M3D1A1058536). J.H.P. acknowledges this research was supported by Basic Science Research Program through NRF funded by the Ministry of Education (NRF-2019R1I1A1A01063644). S.H. acknowledges the tuition support from the Hyundai Motor Chung Mong-Koo Foundation.

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Correction to: Complementary Type Ferroelectric Memory Transistor Circuits with P- and N-Channel MoTe 2 (Advanced Electronic Materials, (2020), 6, 9, (2000479), 10.1002/aelm.202000479)

Abstract

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