Controlling the defects and transition layer in SiO₂ films grown on 4H-SiC via direct plasma-assisted oxidation

Engineering

• Defects 100%
• Room Temperature 33%
• Oxide Layer 33%
• Frequency Dispersion 33%
• Interface Trap 33%
• Hysteresis 33%
• Electrical Performance 33%
• Sio2 Film 33%
• Electrical Measurement 33%
• Stress Induced Leakage Current 33%
• Characteristics 33%
• Density 33%
• High Quality 33%

Physics

• Oxidation 100%
• Defects 100%
• Film Thickness 33%
• Room Temperature 33%
• X Ray Spectroscopy 33%
• Hysteresis 33%
• Density Functional Theory 33%
• Electronic Structure 33%
• Structural Stability 33%
• Calculation 33%

Material Science

• Liquid Films 100%
• Defect 100%
• Semiconductor Structure 66%
• Oxidation Reaction 66%
• Electrical Property 66%
• Silicon Oxycarbide 33%
• X-Ray Absorption Spectroscopy 33%