Controlled super-lateral growth of Si films for microstructural manipulation and optimization

J. S. Im, M. A. Crowder, R. S. Sposili, J. P. Leonard, H. J. Kim, J. H. Yoon, V. V. Gupta, H. Jin Song, H. S. Cho

Research output: Contribution to journalArticlepeer-review

160 Citations (Scopus)


This paper reviews a particular form of pulsed-laser-based thin-film crystallization method referred to as controlled super-lateral growth (C-SLG). By systematically manipulating and controlling the locations, shapes, and extent of melting induced by the incident laser pulses, the C-SLG approach - notably in a version referred to as sequential lateral solidification (SLS) - can lead to realization of a variety of microstructurally designed crystalline Si films with low structural defect densities, including 1. large-grained and grain-boundary-location controlled polycrystalline films, 2. directionally solidified microstructures, or 3. location-controlled single-crystal regions.

Original languageEnglish
Pages (from-to)603-617
Number of pages15
JournalPhysica Status Solidi (A) Applied Research
Issue number2
Publication statusPublished - 1998 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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