Controlled doping of single crystalline diluted magnetic semiconductor Ga1-xMnxN nanowires

Yun Ki Byeun; Kyong Sop Han; Heon Jin Choi; Sung Churl Choi

doi:10.1016/j.msea.2006.10.071

Controlled doping of single crystalline diluted magnetic semiconductor Ga_1-xMn_xN nanowires

Yun Ki Byeun, Kyong Sop Han, Heon Jin Choi, Sung Churl Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga_1-xMn_xN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several μm. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN_1-xMn_xN nanowires with x > 0.04.

Original language	English
Pages (from-to)	499-502
Number of pages	4
Journal	Materials Science and Engineering A
Volume	452-453
DOIs	https://doi.org/10.1016/j.msea.2006.10.071
Publication status	Published - 2007 Apr 15

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Science and Technology (2E19440).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.msea.2006.10.071

Cite this

@article{fc3c99cf529c44339a56e034642c613e,

title = "Controlled doping of single crystalline diluted magnetic semiconductor Ga1-xMnxN nanowires",

abstract = "We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1-xMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several μm. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1-xMnxN nanowires with x > 0.04.",

author = "Byeun, {Yun Ki} and Han, {Kyong Sop} and Choi, {Heon Jin} and Choi, {Sung Churl}",

note = "Funding Information: This work was supported by the Korea Institute of Science and Technology (2E19440).",

year = "2007",

month = apr,

day = "15",

doi = "10.1016/j.msea.2006.10.071",

language = "English",

volume = "452-453",

pages = "499--502",

journal = "Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing",

issn = "0921-5093",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Controlled doping of single crystalline diluted magnetic semiconductor Ga1-xMnxN nanowires

AU - Byeun, Yun Ki

AU - Han, Kyong Sop

AU - Choi, Heon Jin

AU - Choi, Sung Churl

N1 - Funding Information: This work was supported by the Korea Institute of Science and Technology (2E19440).

PY - 2007/4/15

Y1 - 2007/4/15

N2 - We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1-xMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several μm. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1-xMnxN nanowires with x > 0.04.

AB - We report on the optical and magnetic properties of single crystalline dilute magnetic semiconductor Ga1-xMnxN nanowires. The nanowires were fabricated by chemical vapor transport process, and had diameters of <100 nm and length of several μm. Controlled doping of manganese in the range of x = 0.01-0.08 was successfully achieved by varying the processing conditions. X-ray diffraction and transmission electron microscopy observation showed that the nanowires are single crystalline without any secondary phases. Photoluminescence emissions of all the doped nanowires were red-shifted (2.8 eV) compare to pure gallium nitride nanowires (3.3 eV) at room temperature. Ferromagnetism up to room temperature was observed in GaN1-xMnxN nanowires with x > 0.04.

UR - http://www.scopus.com/inward/record.url?scp=33847250409&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847250409&partnerID=8YFLogxK

U2 - 10.1016/j.msea.2006.10.071

DO - 10.1016/j.msea.2006.10.071

M3 - Article

AN - SCOPUS:33847250409

SN - 0921-5093

VL - 452-453

SP - 499

EP - 502

JO - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

JF - Materials Science & Engineering A: Structural Materials: Properties, Microstructure and Processing

ER -