Controlled band offset in (Gd2 O3) 1-x (SiO2) x (0≤x≤1) n-GaAs (001) structure

Jun Kyu Yang; Hyung Ho Park

doi:10.1063/1.1992652

Controlled band offset in (Gd2 O3) 1-x (SiO2) x (0≤x≤1) n-GaAs (001) structure

Jun Kyu Yang, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

This letter investigates the chemistry and energy band structure of (Gd2 O3) 1-x (SiO2) x (0≤x≤1) films grown on n -GaAs (001). Dielectric band gap and interfacial band alignment of Gd2 O3 films were modified by compounding with SiO2. Binding energy shift of core level was observed from different electronegativity of second nearest-neighbor element. Controlled parameters of energy band structure were systematically characterized by valence band, absorption, and energy loss spectra. Assuming no Fermi level pinning in the midgap of n -GaAs, band offset values represent almost linear dependency on the concentration of SiO2. The correlation of band offset with the electrical properties, as probed by capacitance and leakage current measurements, was also discussed.

Original language	English
Article number	022104
Journal	Applied Physics Letters
Volume	87
Issue number	2
DOIs	https://doi.org/10.1063/1.1992652
Publication status	Published - 2005 Jul 11

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant No. KRF-2004-041-D00431. Experiments at PLS were supported in part by MOST and POSTECH.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1992652

Cite this

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abstract = "This letter investigates the chemistry and energy band structure of (Gd2 O3) 1-x (SiO2) x (0≤x≤1) films grown on n -GaAs (001). Dielectric band gap and interfacial band alignment of Gd2 O3 films were modified by compounding with SiO2. Binding energy shift of core level was observed from different electronegativity of second nearest-neighbor element. Controlled parameters of energy band structure were systematically characterized by valence band, absorption, and energy loss spectra. Assuming no Fermi level pinning in the midgap of n -GaAs, band offset values represent almost linear dependency on the concentration of SiO2. The correlation of band offset with the electrical properties, as probed by capacitance and leakage current measurements, was also discussed.",

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AU - Park, Hyung Ho

N1 - Funding Information: This work was supported by Korea Research Foundation Grant No. KRF-2004-041-D00431. Experiments at PLS were supported in part by MOST and POSTECH.

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N2 - This letter investigates the chemistry and energy band structure of (Gd2 O3) 1-x (SiO2) x (0≤x≤1) films grown on n -GaAs (001). Dielectric band gap and interfacial band alignment of Gd2 O3 films were modified by compounding with SiO2. Binding energy shift of core level was observed from different electronegativity of second nearest-neighbor element. Controlled parameters of energy band structure were systematically characterized by valence band, absorption, and energy loss spectra. Assuming no Fermi level pinning in the midgap of n -GaAs, band offset values represent almost linear dependency on the concentration of SiO2. The correlation of band offset with the electrical properties, as probed by capacitance and leakage current measurements, was also discussed.

AB - This letter investigates the chemistry and energy band structure of (Gd2 O3) 1-x (SiO2) x (0≤x≤1) films grown on n -GaAs (001). Dielectric band gap and interfacial band alignment of Gd2 O3 films were modified by compounding with SiO2. Binding energy shift of core level was observed from different electronegativity of second nearest-neighbor element. Controlled parameters of energy band structure were systematically characterized by valence band, absorption, and energy loss spectra. Assuming no Fermi level pinning in the midgap of n -GaAs, band offset values represent almost linear dependency on the concentration of SiO2. The correlation of band offset with the electrical properties, as probed by capacitance and leakage current measurements, was also discussed.

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Controlled band offset in (Gd2 O3) 1-x (SiO2) x (0≤x≤1) n-GaAs (001) structure

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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