Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications

Ji Hyuk Choi; Sachindra Nath Das; Jae Min Myoung

doi:10.1063/1.3204450

Controllable resistance switching behavior of NiO/SiO₂ double layers for nonvolatile memory applications

Ji Hyuk Choi, Sachindra Nath Das, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Resistive switching characteristics of the double layer (NiO/ SiO ₂) were studied for possible nonvolatile memory applications. The effect of SiO₂ thickness variation in the memory device was investigated. A repeatable resistance switching behavior was observed with on/off ratio 10⁵. The operation voltage of the device depended on the thickness of SiO₂ layer and it increases with increasing SiO ₂ thickness. High-resolution transmission electron microscopy analyses revealed that the formation/rapture of Ni filament like percolation path inside SiO₂ layer is responsible for the current transport mechanism.

Original language	English
Article number	062105
Journal	Applied Physics Letters
Volume	95
Issue number	6
DOIs	https://doi.org/10.1063/1.3204450
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by Samsung Electronics Co. Ltd. (Grant No. 2008-8-2105) and the second stage of the Brain Korea 21 Project in 2008.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3204450

Cite this

@article{ec3c5c872bda4367b3f08e12c4440c5c,

title = "Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications",

abstract = "Resistive switching characteristics of the double layer (NiO/ SiO 2) were studied for possible nonvolatile memory applications. The effect of SiO2 thickness variation in the memory device was investigated. A repeatable resistance switching behavior was observed with on/off ratio 105. The operation voltage of the device depended on the thickness of SiO2 layer and it increases with increasing SiO 2 thickness. High-resolution transmission electron microscopy analyses revealed that the formation/rapture of Ni filament like percolation path inside SiO2 layer is responsible for the current transport mechanism.",

author = "Choi, {Ji Hyuk} and Das, {Sachindra Nath} and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by Samsung Electronics Co. Ltd. (Grant No. 2008-8-2105) and the second stage of the Brain Korea 21 Project in 2008.",

year = "2009",

doi = "10.1063/1.3204450",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications

AU - Choi, Ji Hyuk

AU - Das, Sachindra Nath

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by Samsung Electronics Co. Ltd. (Grant No. 2008-8-2105) and the second stage of the Brain Korea 21 Project in 2008.

PY - 2009

Y1 - 2009

N2 - Resistive switching characteristics of the double layer (NiO/ SiO 2) were studied for possible nonvolatile memory applications. The effect of SiO2 thickness variation in the memory device was investigated. A repeatable resistance switching behavior was observed with on/off ratio 105. The operation voltage of the device depended on the thickness of SiO2 layer and it increases with increasing SiO 2 thickness. High-resolution transmission electron microscopy analyses revealed that the formation/rapture of Ni filament like percolation path inside SiO2 layer is responsible for the current transport mechanism.

AB - Resistive switching characteristics of the double layer (NiO/ SiO 2) were studied for possible nonvolatile memory applications. The effect of SiO2 thickness variation in the memory device was investigated. A repeatable resistance switching behavior was observed with on/off ratio 105. The operation voltage of the device depended on the thickness of SiO2 layer and it increases with increasing SiO 2 thickness. High-resolution transmission electron microscopy analyses revealed that the formation/rapture of Ni filament like percolation path inside SiO2 layer is responsible for the current transport mechanism.

UR - http://www.scopus.com/inward/record.url?scp=69049093929&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69049093929&partnerID=8YFLogxK

U2 - 10.1063/1.3204450

DO - 10.1063/1.3204450

M3 - Article

AN - SCOPUS:69049093929

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062105

ER -