Controllable dimension of ZnO nanowalls on GaN/c-Al 2O 3 substrate by vapor phase epitaxy method

W. Y. Song, T. I. Shin, S. M. Kang, S. W. Kim, J. H. Yang, M. H. Park, C. W. Yang, D. H. Yoon

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Vertically well-aligned ZnO nanowalls were successfully synthesized at 950-1050°C. Ar gas was introduced into the furnace at a flow rate of 2000-2500 seem. An Au thin film with a thickness of 3 nm was used as a catalyst. The ZnO nanowalls were successfully grown on the substrate and most of them had nearly the same thickness and were oriented perpendicular to the substrate. The morphology and chemical composition of the ZnO nanowalls were examined as a function of the growth conditions examined. It was found that the grown ZnO nanowalls have a single-crystalline hexagonal structure and preferred c-axis growth orientation based on the X-ray diffraction and high-resolution transmission electron microscope measurements. The room temperature photoluminescence showed a strong free-exciton emission band with negligible deep level emission, indicating the high optical property of our ZnO nanowall samples.

Original languageEnglish
Pages (from-to)4783-4786
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number9
Publication statusPublished - 2008 Sept

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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