Control of the interfacial reaction in HfO                         2                          on Si-passivated GaAs

Sang Han Park; Yu Seon Kang; Jimin Chae; Hyo Jin Kim; Mann Ho Cho; Dae Hong Ko; Young Chul Byun; Hyoungsub Kim; Sang Wan Cho; Chung Yi Kim; Jung Hye Seo

doi:10.1016/j.apsusc.2013.06.118

Control of the interfacial reaction in HfO ₂ on Si-passivated GaAs

Sang Han Park, Yu Seon Kang, Jimin Chae, Hyo Jin Kim, Mann Ho Cho, Dae Hong Ko, Young Chul Byun, Hyoungsub Kim, Sang Wan Cho, Chung Yi Kim, Jung Hye Seo

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The physical and electrical effects caused by interfacial reactions of HfO ₂ on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO ₂ /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO ₂ and a mixture of HfO ₂ and SiO ₂ after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO ₂ dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO ₂ result in the increase of the interfacial defect.

Original language	English
Pages (from-to)	375-381
Number of pages	7
Journal	Applied Surface Science
Volume	283
DOIs	https://doi.org/10.1016/j.apsusc.2013.06.118
Publication status	Published - 2013 Oct 15

Bibliographical note

Funding Information:
This work was partially supported by an Industry-Academy joint research program between Samsung Electronics-Yonsei University and a grant of the “ Next-generation substrate technology for high performance semiconductor devices (No. KI002083 )” from the Ministry of Knowledge Economy of Korea.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2013.06.118

Cite this

Park, S. H., Kang, Y. S., Chae, J., Kim, H. J., Cho, M. H., Ko, D. H., Byun, Y. C., Kim, H., Cho, S. W., Kim, C. Y., & Seo, J. H. (2013). Control of the interfacial reaction in HfO ₂ on Si-passivated GaAs Applied Surface Science, 283, 375-381. https://doi.org/10.1016/j.apsusc.2013.06.118

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title = " Control of the interfacial reaction in HfO 2 on Si-passivated GaAs ",

abstract = " The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.",

author = "Park, {Sang Han} and Kang, {Yu Seon} and Jimin Chae and Kim, {Hyo Jin} and Cho, {Mann Ho} and Ko, {Dae Hong} and Byun, {Young Chul} and Hyoungsub Kim and Cho, {Sang Wan} and Kim, {Chung Yi} and Seo, {Jung Hye}",

note = "Funding Information: This work was partially supported by an Industry-Academy joint research program between Samsung Electronics-Yonsei University and a grant of the “ Next-generation substrate technology for high performance semiconductor devices (No. KI002083 )” from the Ministry of Knowledge Economy of Korea. ",

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doi = "10.1016/j.apsusc.2013.06.118",

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AU - Kang, Yu Seon

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AU - Kim, Hyo Jin

AU - Cho, Mann Ho

AU - Ko, Dae Hong

AU - Byun, Young Chul

AU - Kim, Hyoungsub

AU - Cho, Sang Wan

AU - Kim, Chung Yi

AU - Seo, Jung Hye

N1 - Funding Information: This work was partially supported by an Industry-Academy joint research program between Samsung Electronics-Yonsei University and a grant of the “ Next-generation substrate technology for high performance semiconductor devices (No. KI002083 )” from the Ministry of Knowledge Economy of Korea.

PY - 2013/10/15

Y1 - 2013/10/15

N2 - The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.

AB - The physical and electrical effects caused by interfacial reactions of HfO 2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of GaO. Moreover, post-nitridation in HfO 2 /Si/GaAs significantly reduced the formation of AsO and GaO. The depth profiling data showed that two separated layered structures were formed with HfO 2 and a mixture of HfO 2 and SiO 2 after the annealing process. The crystalline structure and formation of GaO in the film affect the band offsets between GaAs and the high-k HfO 2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by GaO diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO 2 result in the increase of the interfacial defect.

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