In organic field-effect transistors (OFETs), the characteristics of the interface between the organic semiconductor and the gate dielectric are crucial determinants of device performance. We review recent progress in the control of mesoscale/nanoscale ordering of organic semiconductors at the gate dielectric. Issues concerning growth of the organic semiconductor on the surface-controlled gate dielectric, in-plane alignment of organic semiconductors, and self-assembled monolayers for organic semiconductors/dielectric are explored. We also discuss the effects of the molecular ordering and film morphologies of organic semiconductors on the electrical properties of OFETs.
|Number of pages||13|
|Journal||Journal of Materials Chemistry|
|Publication status||Published - 2010|
All Science Journal Classification (ASJC) codes
- Materials Chemistry