GaN nanowire field-effect transistors were fabricated using single-crystalline GaN nanowires synthesized by thermal evaporation of GaN powder with NH3. They were found to be depletion mode transistors with an electron concentration of ∼107cm-1, electron mobility of 50cm2V-1s-1, and on/off current ratio of ∼102. Using the transmission line method, the resistivity of the GaN nanowires and specific contact resistivity were estimated to be 7.8 × 10-2Ωcm and 1.7 × 10 -5Ωcm2, respectively. The current transport at contacts was described by the thermionic emission with a barrier height of 68meV. The contact characteristics were improved by supplying excess carriers in the nanowires. These results will enable GaN nanowires to be used in reliable nanoscale devices.
|Number of pages||4|
|Publication status||Published - 2006 May 14|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering