Concurrent presence of unipolar and bipolar resistive switching phenomena in pnictogen oxide Sb2O5 films

Youngbae Ahn, Jong Ho Lee, Gun Hwan Kim, Ji Woon Park, Jaeyeong Heo, Seung Wook Ryu, Young Seok Kim, Cheol Seong Hwang, Hyeong Joon Kim

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7 Citations (Scopus)

Abstract

The concurrent presence of unipolar resistive switching (URS) and bipolar resistive switching (BRS) characteristics of the Sb/Sb2O 5/Pt structure were examined. It was discovered that the BRS phenomenon was driven by the abnormal reset process during URS cycles which was induced by the rupture and recovery of the conducting filament (CF) in the localized region near the anode. The electrical conduction behavior in the high resistance state of URS and BRS was explained by the Schottky emission and space-charge-limited current mechanism, meaning that the URS and BRS phenomena are induced by the extent of reoxidaton and reduction regarding the local CF-ruptured region.

Original languageEnglish
Article number114105
JournalJournal of Applied Physics
Volume112
Issue number11
DOIs
Publication statusPublished - 2012 Dec 1

Bibliographical note

Funding Information:
This work was supported by R&D Program of the Ministry of Knowledge and Economy (10039191), the Converging Research Center Program (2012K001299), and the Global Research Laboratory program (2012040157) through the National Research Foundation (NRF) of Korean government.

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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