Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

Dongjo Kim; Chang Young Koo; Keunkyu Song; Youngmin Jeong; Jooho Moon

doi:10.1063/1.3225555

Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

Dongjo Kim, Chang Young Koo, Keunkyu Song, Youngmin Jeong, Jooho Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Abstract

We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO) -based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.

Original language	English
Article number	103501
Journal	Applied Physics Letters
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.3225555
Publication status	Published - 2009

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (Grant Nos. R0A-2005-000-10011-0). It was also partially supported by the Second Stage of the Brain Korea 21 Project.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3225555

Cite this

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abstract = "We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO) -based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.",

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AU - Kim, Dongjo

AU - Koo, Chang Young

AU - Song, Keunkyu

AU - Jeong, Youngmin

AU - Moon, Jooho

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (Grant Nos. R0A-2005-000-10011-0). It was also partially supported by the Second Stage of the Brain Korea 21 Project.

PY - 2009

Y1 - 2009

N2 - We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO) -based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.

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Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

Abstract

Bibliographical note

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