Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates

K. S. Jeon, J. H. Sung, M. W. Lee, H. Y. Song, E. A. Lee, S. O. Kim, H. J. Choi, H. Y. Shin, W. H. Park, Y. I. Jang, M. G. Kang, Y. H. Choi, J. S. Lee, D. H. Ko, H. Y. Ryu

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4 Citations (Scopus)


We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates. The strain characteristics are investigated using micro-Raman spectroscopy and high-resolution transmission electron microscopy. These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire. When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch.

Original languageEnglish
Pages (from-to)5264-5266
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Issue number7
Publication statusPublished - 2015 Jul 1

Bibliographical note

Publisher Copyright:
Copyright © 2015 American Scientific Publishers All rights reserved.

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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