Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors

Jungwoo Oh, Jeff Huang, Yen Ting Chen, Injo Ok, Kanghoon Jeon, Se Hoon Lee, Barry Sassman, Wei Yip Loh, Hi Deok Lee, Dea Hong Ko, Prashant Majhi, Paul Kirsch, Raj Jammy

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