Comparison of growth rate at oxidation of Si1-xGex nanowires

Sang Yeon Kim; Hyun Jin Chang; Han Kyu Seong; Heon Jin Choi; Dae Hong Ko

doi:10.1149/1.3005392

Comparison of growth rate at oxidation of Si_1-xGe_x nanowires

Sang Yeon Kim, Hyun Jin Chang, Han Kyu Seong, Heon Jin Choi, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The oxidation behaviors of Si_1-xGe_x nanowires were investigated using TEM analysis. Thicker nanowires had higher oxide growth rates. Si_1-xGe_x and silicon nanowires exhibited a saturation tendency as the oxidation time increased. The oxide growth rate of Si_1.xGe_x nanowires was slightly faster than that of silicon nanowires. Differences in germanium content also affect the oxidation behavior.

Original language	English
Title of host publication	ECS Transactions - Nanotechnology (General) - 213th ECS Meeting
Publisher	Electrochemical Society Inc.
Pages	7-12
Number of pages	6
Edition	18
ISBN (Electronic)	9781566776769
DOIs	https://doi.org/10.1149/1.3005392
Publication status	Published - 2008
Event	Nanotechnology General Session - 213th Meeting of the Electrochemical Society - Phoenix, AZ, United States Duration: 2008 May 18 → 2008 May 23

Publication series

Name	ECS Transactions
Number	18
Volume	13
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Nanotechnology General Session - 213th Meeting of the Electrochemical Society
Country/Territory	United States
City	Phoenix, AZ
Period	08/5/18 → 08/5/23

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.3005392

Cite this

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title = "Comparison of growth rate at oxidation of Si1-xGex nanowires",

abstract = "The oxidation behaviors of Si1-xGex nanowires were investigated using TEM analysis. Thicker nanowires had higher oxide growth rates. Si1-xGex and silicon nanowires exhibited a saturation tendency as the oxidation time increased. The oxide growth rate of Si1.xGex nanowires was slightly faster than that of silicon nanowires. Differences in germanium content also affect the oxidation behavior.",

author = "Kim, {Sang Yeon} and Chang, {Hyun Jin} and Seong, {Han Kyu} and Choi, {Heon Jin} and Ko, {Dae Hong}",

year = "2008",

doi = "10.1149/1.3005392",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "18",

pages = "7--12",

booktitle = "ECS Transactions - Nanotechnology (General) - 213th ECS Meeting",

edition = "18",

note = "Nanotechnology General Session - 213th Meeting of the Electrochemical Society ; Conference date: 18-05-2008 Through 23-05-2008",

}

Kim, SY, Chang, HJ, Seong, HK, Choi, HJ & Ko, DH 2008, Comparison of growth rate at oxidation of Si_1-xGe_x nanowires. in ECS Transactions - Nanotechnology (General) - 213th ECS Meeting. 18 edn, ECS Transactions, no. 18, vol. 13, Electrochemical Society Inc., pp. 7-12, Nanotechnology General Session - 213th Meeting of the Electrochemical Society, Phoenix, AZ, United States, 08/5/18. https://doi.org/10.1149/1.3005392

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T1 - Comparison of growth rate at oxidation of Si1-xGex nanowires

AU - Kim, Sang Yeon

AU - Chang, Hyun Jin

AU - Seong, Han Kyu

AU - Choi, Heon Jin

AU - Ko, Dae Hong

PY - 2008

Y1 - 2008

N2 - The oxidation behaviors of Si1-xGex nanowires were investigated using TEM analysis. Thicker nanowires had higher oxide growth rates. Si1-xGex and silicon nanowires exhibited a saturation tendency as the oxidation time increased. The oxide growth rate of Si1.xGex nanowires was slightly faster than that of silicon nanowires. Differences in germanium content also affect the oxidation behavior.

AB - The oxidation behaviors of Si1-xGex nanowires were investigated using TEM analysis. Thicker nanowires had higher oxide growth rates. Si1-xGex and silicon nanowires exhibited a saturation tendency as the oxidation time increased. The oxide growth rate of Si1.xGex nanowires was slightly faster than that of silicon nanowires. Differences in germanium content also affect the oxidation behavior.

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BT - ECS Transactions - Nanotechnology (General) - 213th ECS Meeting

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