Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.
Bibliographical noteFunding Information:
This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R and D Program funded by the Ministry of Science and Technology, Republic of Korea.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry