Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data

Young Jin Lee; Doo Jin Choi; Sung Soon Kim; Hong Lim Lee; Hae Doo Kim

doi:10.1016/j.surfcoat.2003.09.018

Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data

Young Jin Lee, Doo Jin Choi, Sung Soon Kim, Hong Lim Lee, Hae Doo Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.

Original language	English
Pages (from-to)	415-419
Number of pages	5
Journal	Surface and Coatings Technology
Volume	177-178
DOIs	https://doi.org/10.1016/j.surfcoat.2003.09.018
Publication status	Published - 2004 Jan 30

Bibliographical note

Funding Information:
This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R and D Program funded by the Ministry of Science and Technology, Republic of Korea.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.surfcoat.2003.09.018

Cite this

@article{d03e33472513402e809dfaafbf487544,

title = "Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data",

abstract = "Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.",

author = "Lee, {Young Jin} and Choi, {Doo Jin} and Kim, {Sung Soon} and Lee, {Hong Lim} and Kim, {Hae Doo}",

note = "Funding Information: This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R and D Program funded by the Ministry of Science and Technology, Republic of Korea.",

year = "2004",

month = jan,

day = "30",

doi = "10.1016/j.surfcoat.2003.09.018",

language = "English",

volume = "177-178",

pages = "415--419",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

}

TY - JOUR

T1 - Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data

AU - Lee, Young Jin

AU - Choi, Doo Jin

AU - Kim, Sung Soon

AU - Lee, Hong Lim

AU - Kim, Hae Doo

N1 - Funding Information: This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R and D Program funded by the Ministry of Science and Technology, Republic of Korea.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.

AB - Silicon carbide films were produced through a low pressure CVD process in a horizontal hot wall deposition system. The computational simulation of gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variables (i.e. temperature and dilute gas addition). The simulated results were adapted to the experimental results. The model showed the reasons for microstructural and growth rate variations of SiC film with temperature and diluent gas. All simulation results had important connections with temperatures, which had an effect on the growth atmosphere of the system.

UR - http://www.scopus.com/inward/record.url?scp=1342331928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1342331928&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2003.09.018

DO - 10.1016/j.surfcoat.2003.09.018

M3 - Article

AN - SCOPUS:1342331928

SN - 0257-8972

VL - 177-178

SP - 415

EP - 419

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

ER -

Comparison of diluent gas effect on the growth behavior of horizontal CVD SiC with analytical and experimental data

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this