Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-MOSFETs

Jiwon Chang; Leonard F. Register; Sanjay K. Banerjee

doi:10.1109/SISPAD.2013.6650661

Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX₂ (M = Mo, W; X = S, Se, Te) n-MOSFETs

Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

We study the transport properties of monolayer transition metal Dichalcogenides (TMDs) MX₂ (M = Mo, W; X = S, Se, Te) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using an atomistic tight-binding full-band ballistic quantum transport simulations, with hopping potentials obtained from density functional theory. We discuss the subthreshold slope (SS), drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX₂ MOSFETs. We also report the possibility of negative differential resistance to the extent quasi-ballistic transport exists in such nanostructure TMD MOSFETs.

Original language	English
Title of host publication	2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages	408-411
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2013.6650661
Publication status	Published - 2013
Event	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom Duration: 2013 Sept 3 → 2013 Sept 5

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Country/Territory	United Kingdom
City	Glasgow
Period	13/9/3 → 13/9/5

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Access to Document

10.1109/SISPAD.2013.6650661

Cite this

Chang, J., Register, L. F., & Banerjee, S. K. (2013). Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX₂ (M = Mo, W; X = S, Se, Te) n-MOSFETs. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 (pp. 408-411). [6650661] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2013.6650661

Chang, Jiwon ; Register, Leonard F. ; Banerjee, Sanjay K. / Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX₂ (M = Mo, W; X = S, Se, Te) n-MOSFETs. 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. pp. 408-411 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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abstract = "We study the transport properties of monolayer transition metal Dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using an atomistic tight-binding full-band ballistic quantum transport simulations, with hopping potentials obtained from density functional theory. We discuss the subthreshold slope (SS), drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance to the extent quasi-ballistic transport exists in such nanostructure TMD MOSFETs.",

author = "Jiwon Chang and Register, {Leonard F.} and Banerjee, {Sanjay K.}",

year = "2013",

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note = "18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 ; Conference date: 03-09-2013 Through 05-09-2013",

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Chang, J, Register, LF & Banerjee, SK 2013, Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX₂ (M = Mo, W; X = S, Se, Te) n-MOSFETs. in 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013., 6650661, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 408-411, 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, Glasgow, United Kingdom, 13/9/3. https://doi.org/10.1109/SISPAD.2013.6650661

Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX₂ (M = Mo, W; X = S, Se, Te) n-MOSFETs. / Chang, Jiwon; Register, Leonard F.; Banerjee, Sanjay K.
2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. p. 408-411 6650661 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - We study the transport properties of monolayer transition metal Dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using an atomistic tight-binding full-band ballistic quantum transport simulations, with hopping potentials obtained from density functional theory. We discuss the subthreshold slope (SS), drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance to the extent quasi-ballistic transport exists in such nanostructure TMD MOSFETs.

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Chang J, Register LF, Banerjee SK. Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX₂ (M = Mo, W; X = S, Se, Te) n-MOSFETs. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. p. 408-411. 6650661. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2013.6650661