Comparative study of various latch-type sense amplifiers

Taehui Na; Seung Han Woo; Jisu Kim; Hanwool Jeong; Seong Ook Jung

doi:10.1109/TVLSI.2013.2239320

Comparative study of various latch-type sense amplifiers

Taehui Na, Seung Han Woo, Jisu Kim, Hanwool Jeong, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

When the input voltage difference of a sense amplifier (SA) exceeds the offset voltage (V_OS), the SA correctly detects it and outputs a large signal. However, when the input voltage is in a certain region, the SA can fail to sense the input voltage difference even if it is sufficiently large. This input voltage region is defined as the sensing dead zone of the SA. Because sensing dead zones differ depending on SAs and the input voltages to the SA differ depending on the memory devices, analyzing the sensing dead zone is very important. In this brief, we analyze the sensing dead zones of the most popular latch-type SAs: voltage-and current-latched SAs. Furthermore, a suitable latch-type SA scheme is suggested for various SA input voltages in terms of sensing delay, power consumption, and PDP, using a 65-nm predictive technology model at a V_DD of 1.1 V.

Original language	English
Article number	6468116
Pages (from-to)	425-429
Number of pages	5
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	22
Issue number	2
DOIs	https://doi.org/10.1109/TVLSI.2013.2239320
Publication status	Published - 2014 Feb

All Science Journal Classification (ASJC) codes

Software
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/TVLSI.2013.2239320

Cite this

@article{fa88c5038349414a82b0db99f4300945,

title = "Comparative study of various latch-type sense amplifiers",

abstract = "When the input voltage difference of a sense amplifier (SA) exceeds the offset voltage (VOS), the SA correctly detects it and outputs a large signal. However, when the input voltage is in a certain region, the SA can fail to sense the input voltage difference even if it is sufficiently large. This input voltage region is defined as the sensing dead zone of the SA. Because sensing dead zones differ depending on SAs and the input voltages to the SA differ depending on the memory devices, analyzing the sensing dead zone is very important. In this brief, we analyze the sensing dead zones of the most popular latch-type SAs: voltage-and current-latched SAs. Furthermore, a suitable latch-type SA scheme is suggested for various SA input voltages in terms of sensing delay, power consumption, and PDP, using a 65-nm predictive technology model at a VDD of 1.1 V.",

author = "Taehui Na and Woo, {Seung Han} and Jisu Kim and Hanwool Jeong and Jung, {Seong Ook}",

year = "2014",

month = feb,

doi = "10.1109/TVLSI.2013.2239320",

language = "English",

volume = "22",

pages = "425--429",

journal = "IEEE Transactions on Very Large Scale Integration (VLSI) Systems",

issn = "1063-8210",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Comparative study of various latch-type sense amplifiers

AU - Na, Taehui

AU - Woo, Seung Han

AU - Kim, Jisu

AU - Jeong, Hanwool

AU - Jung, Seong Ook

PY - 2014/2

Y1 - 2014/2

N2 - When the input voltage difference of a sense amplifier (SA) exceeds the offset voltage (VOS), the SA correctly detects it and outputs a large signal. However, when the input voltage is in a certain region, the SA can fail to sense the input voltage difference even if it is sufficiently large. This input voltage region is defined as the sensing dead zone of the SA. Because sensing dead zones differ depending on SAs and the input voltages to the SA differ depending on the memory devices, analyzing the sensing dead zone is very important. In this brief, we analyze the sensing dead zones of the most popular latch-type SAs: voltage-and current-latched SAs. Furthermore, a suitable latch-type SA scheme is suggested for various SA input voltages in terms of sensing delay, power consumption, and PDP, using a 65-nm predictive technology model at a VDD of 1.1 V.

AB - When the input voltage difference of a sense amplifier (SA) exceeds the offset voltage (VOS), the SA correctly detects it and outputs a large signal. However, when the input voltage is in a certain region, the SA can fail to sense the input voltage difference even if it is sufficiently large. This input voltage region is defined as the sensing dead zone of the SA. Because sensing dead zones differ depending on SAs and the input voltages to the SA differ depending on the memory devices, analyzing the sensing dead zone is very important. In this brief, we analyze the sensing dead zones of the most popular latch-type SAs: voltage-and current-latched SAs. Furthermore, a suitable latch-type SA scheme is suggested for various SA input voltages in terms of sensing delay, power consumption, and PDP, using a 65-nm predictive technology model at a VDD of 1.1 V.

UR - http://www.scopus.com/inward/record.url?scp=84895063028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84895063028&partnerID=8YFLogxK

U2 - 10.1109/TVLSI.2013.2239320

DO - 10.1109/TVLSI.2013.2239320

M3 - Article

AN - SCOPUS:84895063028

SN - 1063-8210

VL - 22

SP - 425

EP - 429

JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems

JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems

IS - 2

M1 - 6468116

ER -

Comparative study of various latch-type sense amplifiers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this