We report on the photoresponse from tetracene-based and pentacene-based thin-film transistors (TFTs) with semitransparent Ni Ox source/drain electrodes and Si O2 p+ -Si substrate. Both organic TFTs have been fabricated with identical channel thickness and device geometry. Compared with pentacene-based TFTs, the tetracene-TFT exhibited superior potentials as a photodetector in the visible and ultraviolet range although it showed a field mobility (μ=0.003 cm2 V s) which is two orders of magnitude lower than that of the pentacene-based TFT (μ=∼0.3 cm2 V s). The tetracene-TFT displayed a high photo-to-dark current ratio (Iph Idark) of 3× 103, while that of the pentacene-TFT was only ∼10.
Bibliographical noteFunding Information:
The authors are very appreciative of the financial support from KISTEP (Program No. M1-0214-00-0228) and KRF (Program No. C00047), and they also acknowledge the support from Brain Korea 21 Program. One of the authors (J. H. K.) acknowledges financial support from Yonsei University Research (Fund No. 1999-1-0029) and eSSC at Postech funded by MOST through KOSEF.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)