Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor

Yujin Lee; Seunggi Seo; Taewook Nam; Hyunho Lee; Hwi Yoon; Sanghun Lee; Il Kwon Oh; Hyungjun Kim

doi:10.1109/IITC47697.2020.9515671

Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor

Yujin Lee, Seunggi Seo, Taewook Nam, Hyunho Lee, Hwi Yoon, Sanghun Lee, Il Kwon Oh, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Tungsten (W) has a wide range of industrial applications since it has several advantages such as high conductivity, thermal stability, and electromigration durability. We report the properties of plasma-enhanced atomic-layer-deposited (ALD) tungsten (W) thin films. ALD is promising deposition method for obtaining thin films with good conformality, good uniformity, and low impurity contamination, as its growth mechanism is entirely based on self-limited surface reaction. Thus, the choice of an appropriate precursor for ALD is critical for obtaining high-quality films. We comparatively investigate the growth characteristics and film properties using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(V) tricarbonyl hydride (HEtCpW(CO)3), and Ar/H2 plasma as the reactant. Growth characteristics and film properties were significantly affected by ligands of precursors. These results provide fundamental and useful information, with respect to the selection of the suitable precursor, for practical implementation of device fabrication.

Original language	English
Title of host publication	2020 IEEE International Interconnect Technology Conference, IITC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	97-99
Number of pages	3
ISBN (Electronic)	9781728161136
DOIs	https://doi.org/10.1109/IITC47697.2020.9515671
Publication status	Published - 2020 Oct 5
Event	2020 IEEE International Interconnect Technology Conference, IITC 2020 - Virtual, San Jose, United States Duration: 2020 Oct 5 → 2020 Oct 9

Publication series

Name	2020 IEEE International Interconnect Technology Conference, IITC 2020

Conference

Conference	2020 IEEE International Interconnect Technology Conference, IITC 2020
Country/Territory	United States
City	Virtual, San Jose
Period	20/10/5 → 20/10/9

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Metals and Alloys
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IITC47697.2020.9515671

Cite this

Lee, Y., Seo, S., Nam, T., Lee, H., Yoon, H., Lee, S., Oh, I. K., & Kim, H. (2020). Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor. In 2020 IEEE International Interconnect Technology Conference, IITC 2020 (pp. 97-99). (2020 IEEE International Interconnect Technology Conference, IITC 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC47697.2020.9515671

Lee, Yujin ; Seo, Seunggi ; Nam, Taewook et al. / Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor. 2020 IEEE International Interconnect Technology Conference, IITC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 97-99 (2020 IEEE International Interconnect Technology Conference, IITC 2020).

@inproceedings{14691b5c67984b4baf6ef5618bbf7bbc,

title = "Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor",

abstract = "Tungsten (W) has a wide range of industrial applications since it has several advantages such as high conductivity, thermal stability, and electromigration durability. We report the properties of plasma-enhanced atomic-layer-deposited (ALD) tungsten (W) thin films. ALD is promising deposition method for obtaining thin films with good conformality, good uniformity, and low impurity contamination, as its growth mechanism is entirely based on self-limited surface reaction. Thus, the choice of an appropriate precursor for ALD is critical for obtaining high-quality films. We comparatively investigate the growth characteristics and film properties using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(V) tricarbonyl hydride (HEtCpW(CO)3), and Ar/H2 plasma as the reactant. Growth characteristics and film properties were significantly affected by ligands of precursors. These results provide fundamental and useful information, with respect to the selection of the suitable precursor, for practical implementation of device fabrication.",

keywords = "Atomic Layer Deposition (ALD), Precursor, Resistivity, Thin films, Tungsten",

author = "Yujin Lee and Seunggi Seo and Taewook Nam and Hyunho Lee and Hwi Yoon and Sanghun Lee and Oh, {Il Kwon} and Hyungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Interconnect Technology Conference, IITC 2020 ; Conference date: 05-10-2020 Through 09-10-2020",

year = "2020",

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day = "5",

doi = "10.1109/IITC47697.2020.9515671",

language = "English",

series = "2020 IEEE International Interconnect Technology Conference, IITC 2020",

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Lee, Y, Seo, S, Nam, T, Lee, H, Yoon, H, Lee, S, Oh, IK & Kim, H 2020, Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor. in 2020 IEEE International Interconnect Technology Conference, IITC 2020. 2020 IEEE International Interconnect Technology Conference, IITC 2020, Institute of Electrical and Electronics Engineers Inc., pp. 97-99, 2020 IEEE International Interconnect Technology Conference, IITC 2020, Virtual, San Jose, United States, 20/10/5. https://doi.org/10.1109/IITC47697.2020.9515671

Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor. / Lee, Yujin; Seo, Seunggi; Nam, Taewook et al.
2020 IEEE International Interconnect Technology Conference, IITC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 97-99 (2020 IEEE International Interconnect Technology Conference, IITC 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor

AU - Lee, Yujin

AU - Seo, Seunggi

AU - Nam, Taewook

AU - Lee, Hyunho

AU - Yoon, Hwi

AU - Lee, Sanghun

AU - Oh, Il Kwon

AU - Kim, Hyungjun

PY - 2020/10/5

Y1 - 2020/10/5

N2 - Tungsten (W) has a wide range of industrial applications since it has several advantages such as high conductivity, thermal stability, and electromigration durability. We report the properties of plasma-enhanced atomic-layer-deposited (ALD) tungsten (W) thin films. ALD is promising deposition method for obtaining thin films with good conformality, good uniformity, and low impurity contamination, as its growth mechanism is entirely based on self-limited surface reaction. Thus, the choice of an appropriate precursor for ALD is critical for obtaining high-quality films. We comparatively investigate the growth characteristics and film properties using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(V) tricarbonyl hydride (HEtCpW(CO)3), and Ar/H2 plasma as the reactant. Growth characteristics and film properties were significantly affected by ligands of precursors. These results provide fundamental and useful information, with respect to the selection of the suitable precursor, for practical implementation of device fabrication.

AB - Tungsten (W) has a wide range of industrial applications since it has several advantages such as high conductivity, thermal stability, and electromigration durability. We report the properties of plasma-enhanced atomic-layer-deposited (ALD) tungsten (W) thin films. ALD is promising deposition method for obtaining thin films with good conformality, good uniformity, and low impurity contamination, as its growth mechanism is entirely based on self-limited surface reaction. Thus, the choice of an appropriate precursor for ALD is critical for obtaining high-quality films. We comparatively investigate the growth characteristics and film properties using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(V) tricarbonyl hydride (HEtCpW(CO)3), and Ar/H2 plasma as the reactant. Growth characteristics and film properties were significantly affected by ligands of precursors. These results provide fundamental and useful information, with respect to the selection of the suitable precursor, for practical implementation of device fabrication.

KW - Atomic Layer Deposition (ALD)

KW - Precursor

KW - Resistivity

KW - Thin films

KW - Tungsten

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DO - 10.1109/IITC47697.2020.9515671

M3 - Conference contribution

AN - SCOPUS:85114501566

T3 - 2020 IEEE International Interconnect Technology Conference, IITC 2020

SP - 97

EP - 99

BT - 2020 IEEE International Interconnect Technology Conference, IITC 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE International Interconnect Technology Conference, IITC 2020

Y2 - 5 October 2020 through 9 October 2020

ER -

Lee Y, Seo S, Nam T, Lee H, Yoon H, Lee S et al. Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor. In 2020 IEEE International Interconnect Technology Conference, IITC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 97-99. (2020 IEEE International Interconnect Technology Conference, IITC 2020). doi: 10.1109/IITC47697.2020.9515671

Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

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