Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

D. K. Hwang; Kimoon Lee; Jae Hoon Kim; Seongil Im; Ji Hoon Park; Eugene Kim

doi:10.1063/1.2345243

Comparative studies on the stability of polymer versus SiO₂ gate dielectrics for pentacene thin-film transistors

D. K. Hwang, Kimoon Lee, Jae Hoon Kim, Seongil Im, Ji Hoon Park, Eugene Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

138 Citations (Scopus)

Abstract

The authors report on the electrical reliabilities of poly-4-vinyl phenol (PVP) and SiO₂ gate dielectrics for pentacene thin-film transistors (TFTs). SiO₂ films were grown by dry oxidation and PVP films were prepared by spin coating and subsequent cross-linking at 175°C for 15 min. The pentacene TFTs with the PVP cured for 15 min exhibited a large hysteresis and an abnormal drain-current increase under a gate bias stress over time, while the other TFT with SiO₂ displayed a small hysteresis but its drain current decreases with time. The hysteresis behaviors induced by PVP and SiO₂ were opposite to each other in the gate bias swing direction, due to the difference in hysteresis mechanism between the two types of TFTs. Comparing their hysteresis behavior, the authors fabricated a far more reliable pentacene TFT with PVP by extending the PVP curing time to 1 h. Our improved device with PVP exhibited no hysteresis and persistent toughness to the gate bias stress.

Original language	English
Article number	093507
Journal	Applied Physics Letters
Volume	89
Issue number	9
DOIs	https://doi.org/10.1063/1.2345243
Publication status	Published - 2006

Bibliographical note

Funding Information:
The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228) and LG Philips LCD Co. (project year 2005). They also acknowledge the support from Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges financial support from the Electron Spin Science Center at Postech, funded by KOSEF/MOST.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2345243

Cite this

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title = "Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors",

abstract = "The authors report on the electrical reliabilities of poly-4-vinyl phenol (PVP) and SiO2 gate dielectrics for pentacene thin-film transistors (TFTs). SiO2 films were grown by dry oxidation and PVP films were prepared by spin coating and subsequent cross-linking at 175°C for 15 min. The pentacene TFTs with the PVP cured for 15 min exhibited a large hysteresis and an abnormal drain-current increase under a gate bias stress over time, while the other TFT with SiO2 displayed a small hysteresis but its drain current decreases with time. The hysteresis behaviors induced by PVP and SiO2 were opposite to each other in the gate bias swing direction, due to the difference in hysteresis mechanism between the two types of TFTs. Comparing their hysteresis behavior, the authors fabricated a far more reliable pentacene TFT with PVP by extending the PVP curing time to 1 h. Our improved device with PVP exhibited no hysteresis and persistent toughness to the gate bias stress.",

author = "Hwang, {D. K.} and Kimoon Lee and Kim, {Jae Hoon} and Seongil Im and Park, {Ji Hoon} and Eugene Kim",

note = "Funding Information: The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228) and LG Philips LCD Co. (project year 2005). They also acknowledge the support from Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges financial support from the Electron Spin Science Center at Postech, funded by KOSEF/MOST.",

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AU - Hwang, D. K.

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AU - Kim, Jae Hoon

AU - Im, Seongil

AU - Park, Ji Hoon

AU - Kim, Eugene

N1 - Funding Information: The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228) and LG Philips LCD Co. (project year 2005). They also acknowledge the support from Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges financial support from the Electron Spin Science Center at Postech, funded by KOSEF/MOST.

PY - 2006

Y1 - 2006

N2 - The authors report on the electrical reliabilities of poly-4-vinyl phenol (PVP) and SiO2 gate dielectrics for pentacene thin-film transistors (TFTs). SiO2 films were grown by dry oxidation and PVP films were prepared by spin coating and subsequent cross-linking at 175°C for 15 min. The pentacene TFTs with the PVP cured for 15 min exhibited a large hysteresis and an abnormal drain-current increase under a gate bias stress over time, while the other TFT with SiO2 displayed a small hysteresis but its drain current decreases with time. The hysteresis behaviors induced by PVP and SiO2 were opposite to each other in the gate bias swing direction, due to the difference in hysteresis mechanism between the two types of TFTs. Comparing their hysteresis behavior, the authors fabricated a far more reliable pentacene TFT with PVP by extending the PVP curing time to 1 h. Our improved device with PVP exhibited no hysteresis and persistent toughness to the gate bias stress.

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