Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node

Byungkyu Song; Taehui Na; Hanwool Jeong; Seung H. Kang; Jung Pill Kim; Seong Ook Jung

doi:10.1109/ISOCC.2014.7087593

Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node

Byungkyu Song, Taehui Na, Hanwool Jeong, Seung H. Kang, Jung Pill Kim, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.

Original language	English
Title of host publication	ISOCC 2014 - International SoC Design Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	112-113
Number of pages	2
ISBN (Electronic)	9781479951260
DOIs	https://doi.org/10.1109/ISOCC.2014.7087593
Publication status	Published - 2015 Apr 16
Event	11th International SoC Design Conference, ISOCC 2014 - Jeju, Korea, Republic of Duration: 2014 Nov 3 → 2014 Nov 6

Publication series

Name	ISOCC 2014 - International SoC Design Conference

Other

Other	11th International SoC Design Conference, ISOCC 2014
Country/Territory	Korea, Republic of
City	Jeju
Period	14/11/3 → 14/11/6

All Science Journal Classification (ASJC) codes

Hardware and Architecture

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10.1109/ISOCC.2014.7087593

Cite this

Song, B., Na, T., Jeong, H., Kang, S. H., Kim, J. P., & Jung, S. O. (2015). Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. In ISOCC 2014 - International SoC Design Conference (pp. 112-113). Article 7087593 (ISOCC 2014 - International SoC Design Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISOCC.2014.7087593

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title = "Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node",

abstract = "As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.",

author = "Byungkyu Song and Taehui Na and Hanwool Jeong and Kang, {Seung H.} and Kim, {Jung Pill} and Jung, {Seong Ook}",

year = "2015",

month = apr,

day = "16",

doi = "10.1109/ISOCC.2014.7087593",

language = "English",

series = "ISOCC 2014 - International SoC Design Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "112--113",

booktitle = "ISOCC 2014 - International SoC Design Conference",

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note = "11th International SoC Design Conference, ISOCC 2014 ; Conference date: 03-11-2014 Through 06-11-2014",

}

Song, B, Na, T, Jeong, H, Kang, SH, Kim, JP & Jung, SO 2015, Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. in ISOCC 2014 - International SoC Design Conference., 7087593, ISOCC 2014 - International SoC Design Conference, Institute of Electrical and Electronics Engineers Inc., pp. 112-113, 11th International SoC Design Conference, ISOCC 2014, Jeju, Korea, Republic of, 14/11/3. https://doi.org/10.1109/ISOCC.2014.7087593

Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. / Song, Byungkyu; Na, Taehui; Jeong, Hanwool et al.
ISOCC 2014 - International SoC Design Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 112-113 7087593 (ISOCC 2014 - International SoC Design Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node

AU - Song, Byungkyu

AU - Na, Taehui

AU - Jeong, Hanwool

AU - Kang, Seung H.

AU - Kim, Jung Pill

AU - Jung, Seong Ook

PY - 2015/4/16

Y1 - 2015/4/16

N2 - As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.

AB - As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.

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DO - 10.1109/ISOCC.2014.7087593

M3 - Conference contribution

T3 - ISOCC 2014 - International SoC Design Conference

SP - 112

EP - 113

BT - ISOCC 2014 - International SoC Design Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th International SoC Design Conference, ISOCC 2014

Y2 - 3 November 2014 through 6 November 2014

ER -

Song B, Na T, Jeong H, Kang SH, Kim JP, Jung SO. Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node. In ISOCC 2014 - International SoC Design Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 112-113. 7087593. (ISOCC 2014 - International SoC Design Conference). doi: 10.1109/ISOCC.2014.7087593

Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node

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