Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime

Min Soo Bae; Chuntaek Park; Ilgu Yun

doi:10.1109/SMACD.2018.8434905

Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime

Min Soo Bae, Chuntaek Park, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation.

Original language	English
Title of host publication	SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	109-112
Number of pages	4
ISBN (Print)	9781538651520
DOIs	https://doi.org/10.1109/SMACD.2018.8434905
Publication status	Published - 2018 Aug 13
Event	15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018 - Prague, Czech Republic Duration: 2018 Jul 2 → 2018 Jul 5

Publication series

Name	SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design

Other

Other	15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018
Country/Territory	Czech Republic
City	Prague
Period	18/7/2 → 18/7/5

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This research was supported by the Institute of BioMed-IT, Energy-IT, and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University in Republic of Korea. The EDA tool was supported by the IC Design Education Center (IDEC), Seoul, Korea.

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

Modelling and Simulation
Instrumentation
Signal Processing
Electrical and Electronic Engineering
Logic

Access to Document

10.1109/SMACD.2018.8434905

Cite this

Bae, M. S., Park, C., & Yun, I. (2018). Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. In SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (pp. 109-112). [8434905] (SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMACD.2018.8434905

Bae, Min Soo ; Park, Chuntaek ; Yun, Ilgu. / Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 109-112 (SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design).

@inproceedings{79649adef3d24ebca20b8a445fa233af,

title = "Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime",

abstract = "In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation.",

author = "Bae, {Min Soo} and Chuntaek Park and Ilgu Yun",

note = "Funding Information: ACKNOWLEDGMENT This research was supported by the Institute of BioMed-IT, Energy-IT, and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University in Republic of Korea. The EDA tool was supported by the IC Design Education Center (IDEC), Seoul, Korea. Publisher Copyright: {\textcopyright} 2018 IEEE.; 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018 ; Conference date: 02-07-2018 Through 05-07-2018",

year = "2018",

month = aug,

day = "13",

doi = "10.1109/SMACD.2018.8434905",

language = "English",

isbn = "9781538651520",

series = "SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "109--112",

booktitle = "SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design",

address = "United States",

}

Bae, MS, Park, C & Yun, I 2018, Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. in SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design., 8434905, SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, Institute of Electrical and Electronics Engineers Inc., pp. 109-112, 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018, Prague, Czech Republic, 18/7/2. https://doi.org/10.1109/SMACD.2018.8434905

Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. / Bae, Min Soo; Park, Chuntaek; Yun, Ilgu.
SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. Institute of Electrical and Electronics Engineers Inc., 2018. p. 109-112 8434905 (SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime

AU - Bae, Min Soo

AU - Park, Chuntaek

AU - Yun, Ilgu

N1 - Funding Information: ACKNOWLEDGMENT This research was supported by the Institute of BioMed-IT, Energy-IT, and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University in Republic of Korea. The EDA tool was supported by the IC Design Education Center (IDEC), Seoul, Korea. Publisher Copyright: © 2018 IEEE.

PY - 2018/8/13

Y1 - 2018/8/13

N2 - In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation.

AB - In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation.

UR - http://www.scopus.com/inward/record.url?scp=85052522243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052522243&partnerID=8YFLogxK

U2 - 10.1109/SMACD.2018.8434905

DO - 10.1109/SMACD.2018.8434905

M3 - Conference contribution

AN - SCOPUS:85052522243

SN - 9781538651520

T3 - SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design

SP - 109

EP - 112

BT - SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design, SMACD 2018

Y2 - 2 July 2018 through 5 July 2018

ER -

Bae MS, Park C, Yun I. Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime. In SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design. Institute of Electrical and Electronics Engineers Inc. 2018. p. 109-112. 8434905. (SMACD 2018 - 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design). doi: 10.1109/SMACD.2018.8434905

Compact Drain Current Model of Nanoscale FinFET Considering Short Channel Effect in Ballistic Transport Regime

Abstract

Publication series

Other

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this