Combinatorial synthesis of In-Ga-Sn-O channel transparent thin-film transistors

Joon Chul Moon; Joonseok Yoon; Honglyoul Ju; Changwoo Park

doi:10.3938/jkps.56.1843

Combinatorial synthesis of In-Ga-Sn-O channel transparent thin-film transistors

Joon Chul Moon, Joonseok Yoon, Honglyoul Ju, Changwoo Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Transparent thin-film transistors (TTFTs) with compositionally-graded In-Ga-Sn-O (IGSO) channels were deposited by using a combinatorial approach. The mobilities, the on-off current ratios, and the threshold voltages of the IGSO TTFTs ranged from 0 to 13 Cm²V^-1s^-1, 1 to 2 x 10⁷, -26 to 12 V, respectively. The optimal channel compositions of the IGSO TTFTs were found to be In_0.50Ga_0.28Sn _0.22O_δ and In_0.60Ga _0.35-0.32Sn_0.05-0.08O_δ. The TTFTs with In_0.50Ga_0.28Sn_0.22O_δ channels showed a mobility as high as 11.5 Cm²V^-1S^-1 with an on/off current ratio of 1.4 x 10⁷ and a threshold voltage of 1.9 V. The composition-dependent transfer curve shifts and the on/off current variations empirically established the role of each element in the performance of the TTFTs.

Original language	English
Pages (from-to)	1843-1846
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	56
Issue number	6
DOIs	https://doi.org/10.3938/jkps.56.1843
Publication status	Published - 2010 Jun 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Combinatorial synthesis of In-Ga-Sn-O channel transparent thin-film transistors",

abstract = "Transparent thin-film transistors (TTFTs) with compositionally-graded In-Ga-Sn-O (IGSO) channels were deposited by using a combinatorial approach. The mobilities, the on-off current ratios, and the threshold voltages of the IGSO TTFTs ranged from 0 to 13 Cm2V-1s-1, 1 to 2 x 107, -26 to 12 V, respectively. The optimal channel compositions of the IGSO TTFTs were found to be In0.50Ga0.28Sn 0.22Oδ and In0.60Ga 0.35-0.32Sn0.05-0.08Oδ. The TTFTs with In0.50Ga0.28Sn0.22Oδ channels showed a mobility as high as 11.5 Cm2V-1S-1 with an on/off current ratio of 1.4 x 107 and a threshold voltage of 1.9 V. The composition-dependent transfer curve shifts and the on/off current variations empirically established the role of each element in the performance of the TTFTs.",

author = "Moon, {Joon Chul} and Joonseok Yoon and Honglyoul Ju and Changwoo Park",

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T1 - Combinatorial synthesis of In-Ga-Sn-O channel transparent thin-film transistors

AU - Moon, Joon Chul

AU - Yoon, Joonseok

AU - Ju, Honglyoul

AU - Park, Changwoo

PY - 2010/6/15

Y1 - 2010/6/15

N2 - Transparent thin-film transistors (TTFTs) with compositionally-graded In-Ga-Sn-O (IGSO) channels were deposited by using a combinatorial approach. The mobilities, the on-off current ratios, and the threshold voltages of the IGSO TTFTs ranged from 0 to 13 Cm2V-1s-1, 1 to 2 x 107, -26 to 12 V, respectively. The optimal channel compositions of the IGSO TTFTs were found to be In0.50Ga0.28Sn 0.22Oδ and In0.60Ga 0.35-0.32Sn0.05-0.08Oδ. The TTFTs with In0.50Ga0.28Sn0.22Oδ channels showed a mobility as high as 11.5 Cm2V-1S-1 with an on/off current ratio of 1.4 x 107 and a threshold voltage of 1.9 V. The composition-dependent transfer curve shifts and the on/off current variations empirically established the role of each element in the performance of the TTFTs.

AB - Transparent thin-film transistors (TTFTs) with compositionally-graded In-Ga-Sn-O (IGSO) channels were deposited by using a combinatorial approach. The mobilities, the on-off current ratios, and the threshold voltages of the IGSO TTFTs ranged from 0 to 13 Cm2V-1s-1, 1 to 2 x 107, -26 to 12 V, respectively. The optimal channel compositions of the IGSO TTFTs were found to be In0.50Ga0.28Sn 0.22Oδ and In0.60Ga 0.35-0.32Sn0.05-0.08Oδ. The TTFTs with In0.50Ga0.28Sn0.22Oδ channels showed a mobility as high as 11.5 Cm2V-1S-1 with an on/off current ratio of 1.4 x 107 and a threshold voltage of 1.9 V. The composition-dependent transfer curve shifts and the on/off current variations empirically established the role of each element in the performance of the TTFTs.

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Combinatorial synthesis of In-Ga-Sn-O channel transparent thin-film transistors

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