Combinatorial synthesis of In-Ga-Sn-O channel transparent thin-film transistors

Joon Chul Moon, Joonseok Yoon, Honglyoul Ju, Changwoo Park

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3 Citations (Scopus)


Transparent thin-film transistors (TTFTs) with compositionally-graded In-Ga-Sn-O (IGSO) channels were deposited by using a combinatorial approach. The mobilities, the on-off current ratios, and the threshold voltages of the IGSO TTFTs ranged from 0 to 13 Cm2V-1s-1, 1 to 2 x 107, -26 to 12 V, respectively. The optimal channel compositions of the IGSO TTFTs were found to be In0.50Ga0.28Sn 0.22Oδ and In0.60Ga 0.35-0.32Sn0.05-0.08Oδ. The TTFTs with In0.50Ga0.28Sn0.22Oδ channels showed a mobility as high as 11.5 Cm2V-1S-1 with an on/off current ratio of 1.4 x 107 and a threshold voltage of 1.9 V. The composition-dependent transfer curve shifts and the on/off current variations empirically established the role of each element in the performance of the TTFTs.

Original languageEnglish
Pages (from-to)1843-1846
Number of pages4
JournalJournal of the Korean Physical Society
Issue number6
Publication statusPublished - 2010 Jun 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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