Cobalt and nickel atomic layer depositions for contact applications

Han Bo Ram Lee; Woo Hee Kim; Yongjun Park; Sunggi Baik; Hyungjun Kim

doi:10.1109/IITC.2009.5090371

Cobalt and nickel atomic layer depositions for contact applications

Han Bo Ram Lee, Woo Hee Kim, Yongjun Park, Sunggi Baik, Hyungjun Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Novel NH₃-based Co thermal atomic layer deposition (TALD) process using Co(iPr-AMD)₂ (bis(N,N'-diisopropylacetamidinato) cobalt(II)) and NH₃ as a precursor and a reactant, respectively, was developed for nanoscale contact applications. The T-ALD Co films showed high purity with perfect conformality inside nanosize contact holes. By annealing the T-ALD Co films, CoSi₂ was obtained. Similarly, Ni T-ALD process using NH₃ as a reactant was also investigated by using Ni(dmamb) ₂ (bis(dimethylamino-2-methyl-2-butoxo)nickel) and Ni films showed perfect conformality of T-ALD Ni.

Original language	English
Title of host publication	Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009
Pages	157-158
Number of pages	2
DOIs	https://doi.org/10.1109/IITC.2009.5090371
Publication status	Published - 2009
Event	2009 IEEE International Interconnect Technology Conference, IITC 2009 - Sapporo, Hokkaido, Japan Duration: 2009 Jun 1 → 2009 Jun 3

Publication series

Name	Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Conference

Conference	2009 IEEE International Interconnect Technology Conference, IITC 2009
Country/Territory	Japan
City	Sapporo, Hokkaido
Period	09/6/1 → 09/6/3

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/IITC.2009.5090371

Cite this

Lee, H. B. R., Kim, W. H., Park, Y., Baik, S., & Kim, H. (2009). Cobalt and nickel atomic layer depositions for contact applications. In Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009 (pp. 157-158). Article 5090371 (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009). https://doi.org/10.1109/IITC.2009.5090371

@inproceedings{ce82994d2782496db3529885bf4adab4,

title = "Cobalt and nickel atomic layer depositions for contact applications",

abstract = "Novel NH3-based Co thermal atomic layer deposition (TALD) process using Co(iPr-AMD)2 (bis(N,N'-diisopropylacetamidinato) cobalt(II)) and NH3 as a precursor and a reactant, respectively, was developed for nanoscale contact applications. The T-ALD Co films showed high purity with perfect conformality inside nanosize contact holes. By annealing the T-ALD Co films, CoSi2 was obtained. Similarly, Ni T-ALD process using NH3 as a reactant was also investigated by using Ni(dmamb) 2 (bis(dimethylamino-2-methyl-2-butoxo)nickel) and Ni films showed perfect conformality of T-ALD Ni.",

author = "Lee, {Han Bo Ram} and Kim, {Woo Hee} and Yongjun Park and Sunggi Baik and Hyungjun Kim",

year = "2009",

doi = "10.1109/IITC.2009.5090371",

language = "English",

isbn = "9781424444939",

series = "Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009",

pages = "157--158",

booktitle = "Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009",

note = "2009 IEEE International Interconnect Technology Conference, IITC 2009 ; Conference date: 01-06-2009 Through 03-06-2009",

}

Lee, HBR, Kim, WH, Park, Y, Baik, S & Kim, H 2009, Cobalt and nickel atomic layer depositions for contact applications. in Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009., 5090371, Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009, pp. 157-158, 2009 IEEE International Interconnect Technology Conference, IITC 2009, Sapporo, Hokkaido, Japan, 09/6/1. https://doi.org/10.1109/IITC.2009.5090371

Cobalt and nickel atomic layer depositions for contact applications. / Lee, Han Bo Ram; Kim, Woo Hee; Park, Yongjun et al.
Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009. 2009. p. 157-158 5090371 (Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Cobalt and nickel atomic layer depositions for contact applications

AU - Lee, Han Bo Ram

AU - Kim, Woo Hee

AU - Park, Yongjun

AU - Baik, Sunggi

AU - Kim, Hyungjun

PY - 2009

Y1 - 2009

N2 - Novel NH3-based Co thermal atomic layer deposition (TALD) process using Co(iPr-AMD)2 (bis(N,N'-diisopropylacetamidinato) cobalt(II)) and NH3 as a precursor and a reactant, respectively, was developed for nanoscale contact applications. The T-ALD Co films showed high purity with perfect conformality inside nanosize contact holes. By annealing the T-ALD Co films, CoSi2 was obtained. Similarly, Ni T-ALD process using NH3 as a reactant was also investigated by using Ni(dmamb) 2 (bis(dimethylamino-2-methyl-2-butoxo)nickel) and Ni films showed perfect conformality of T-ALD Ni.

AB - Novel NH3-based Co thermal atomic layer deposition (TALD) process using Co(iPr-AMD)2 (bis(N,N'-diisopropylacetamidinato) cobalt(II)) and NH3 as a precursor and a reactant, respectively, was developed for nanoscale contact applications. The T-ALD Co films showed high purity with perfect conformality inside nanosize contact holes. By annealing the T-ALD Co films, CoSi2 was obtained. Similarly, Ni T-ALD process using NH3 as a reactant was also investigated by using Ni(dmamb) 2 (bis(dimethylamino-2-methyl-2-butoxo)nickel) and Ni films showed perfect conformality of T-ALD Ni.

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U2 - 10.1109/IITC.2009.5090371

DO - 10.1109/IITC.2009.5090371

M3 - Conference contribution

AN - SCOPUS:70349451839

SN - 9781424444939

T3 - Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

SP - 157

EP - 158

BT - Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

T2 - 2009 IEEE International Interconnect Technology Conference, IITC 2009

Y2 - 1 June 2009 through 3 June 2009

ER -

Cobalt and nickel atomic layer depositions for contact applications

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