Clean transfer of graphene and its effect on contact resistance

Jooho Lee; Yongsung Kim; Hyeon Jin Shin; Changseung Lee; Dongwook Lee; Chang Yul Moon; Juhwan Lim; Seong Chan Jun

doi:10.1063/1.4819740

Clean transfer of graphene and its effect on contact resistance

Jooho Lee, Yongsung Kim, Hyeon Jin Shin, Changseung Lee, Dongwook Lee, Chang Yul Moon, Juhwan Lim, Seong Chan Jun

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

We demonstrate herein an effective method of forming a high-quality contact between metal and graphene on a wafer as large as 6 in. This gold-assisted transfer method producing no polymer residue on the graphene surface is introduced, and then the gold film is used directly as an electrode to form the transfer length method pattern for calculating the contact resistance. The graphene surface obtained using the gold-assisted transfer method is clean and uniform without residue or contamination, and its contact resistance is at least 60% lower than that obtained using the conventional poly(methyl methacrylate) assisted transfer method.

Original language	English
Article number	103104
Journal	Applied Physics Letters
Volume	103
Issue number	10
DOIs	https://doi.org/10.1063/1.4819740
Publication status	Published - 2013 Sept 2

Bibliographical note

Funding Information:
This work was partially supported by the Priority Research Centers Program (2009-0093823), the Pioneer Research Center Program (2010-0019313), and the Basic Science Research Program (2013-8-8074) through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "We demonstrate herein an effective method of forming a high-quality contact between metal and graphene on a wafer as large as 6 in. This gold-assisted transfer method producing no polymer residue on the graphene surface is introduced, and then the gold film is used directly as an electrode to form the transfer length method pattern for calculating the contact resistance. The graphene surface obtained using the gold-assisted transfer method is clean and uniform without residue or contamination, and its contact resistance is at least 60% lower than that obtained using the conventional poly(methyl methacrylate) assisted transfer method.",

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AU - Lee, Jooho

AU - Kim, Yongsung

AU - Shin, Hyeon Jin

AU - Lee, Changseung

AU - Lee, Dongwook

AU - Moon, Chang Yul

AU - Lim, Juhwan

AU - Chan Jun, Seong

N1 - Funding Information: This work was partially supported by the Priority Research Centers Program (2009-0093823), the Pioneer Research Center Program (2010-0019313), and the Basic Science Research Program (2013-8-8074) through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning.

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Y1 - 2013/9/2

N2 - We demonstrate herein an effective method of forming a high-quality contact between metal and graphene on a wafer as large as 6 in. This gold-assisted transfer method producing no polymer residue on the graphene surface is introduced, and then the gold film is used directly as an electrode to form the transfer length method pattern for calculating the contact resistance. The graphene surface obtained using the gold-assisted transfer method is clean and uniform without residue or contamination, and its contact resistance is at least 60% lower than that obtained using the conventional poly(methyl methacrylate) assisted transfer method.

AB - We demonstrate herein an effective method of forming a high-quality contact between metal and graphene on a wafer as large as 6 in. This gold-assisted transfer method producing no polymer residue on the graphene surface is introduced, and then the gold film is used directly as an electrode to form the transfer length method pattern for calculating the contact resistance. The graphene surface obtained using the gold-assisted transfer method is clean and uniform without residue or contamination, and its contact resistance is at least 60% lower than that obtained using the conventional poly(methyl methacrylate) assisted transfer method.

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Clean transfer of graphene and its effect on contact resistance

Abstract

Bibliographical note

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