Chemical vapor infiltration (CVI) SiC whisker on carbon woven fabric for filter applications

Ik Whan Kim, Sung Hyuk Cho, Jun Gyu Kim, Doo Jin Choi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


β-silicon carbide whiskers have been synthesized on a carbon fabric by a vapor-solid (VS) mechanism using the Chemical Vapor Infiltration (CVI) process. Optimum processing conditions for SiC whisker growth were determined by mapping of SiC deposition behavior. SiC was deposited on a carbon fabric substrate as a film or whiskers, depending on processing conditions. The mean diameter and line density of the whiskers was the highest at an input gas ratio of 50. As temperature increases, the mean diameter of the whiskers increased and the line density of whiskers decreased. In the optimum processing conditions, whiskers grew uniformly with high growth density and formed a networking structure between each of the carbon filaments resulting in a structure suitable for filter applications.

Original languageEnglish
Pages (from-to)578-581
Number of pages4
JournalJournal of the Ceramic Society of Japan
Issue number1365
Publication statusPublished - 2009 May

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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