Abstract
The low pressure chemical vapor deposition of Cu was investigated on TiN substrates that had been locally seeded with thin Cu layers. These Cu layers were 5 angstroms, 40 angstroms and 130 angstroms thick and had been produced by PIB (Partially Ionized Beam) deposition. The growth rate and the XRD peak intensity ratio (I(111)/I(200)) of CVD-Cu increased somewhat in the case of Cu seeded TiN/Si substrates compared with as-received TiN/Si substrate. At the deposition temperature of 200 °C, Cu film deposited on the 40 angstroms seeded substrate had the lowest electrical resistivity value, 2.42 μ Ω·cm that is as high as 1.5 times the bulk copper value. In adhesion test, as the seeding thickness increased from 0 angstrom to 130 angstroms, the adhesion strength increased from 21 N to 27 N.
| Original language | English |
|---|---|
| Pages (from-to) | 225-230 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 427 |
| DOIs | |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 12 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering