Chemical surface passivation of HfO2 films in a ZnO nanowire transistor

Tae Hyoung Moon; Min Chang Jeong; Byeong Yun Oh; Moon Ho Ham; Min Hong Jeun; Woo Young Lee; Jae Min Myoung

doi:10.1088/0957-4484/17/9/007

Chemical surface passivation of HfO₂ films in a ZnO nanowire transistor

Tae Hyoung Moon, Min Chang Jeong, Byeong Yun Oh, Moon Ho Ham, Min Hong Jeun, Woo Young Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The effects of different annealing atmospheres on the chemical surface structure of HfO₂ gate dielectric layers have been evaluated in terms of the improvement in the transconductance (g_m), current on/off ratio (I_on/I_off), and carrier mobility (μ_e) of a back-gated ZnO nanowire field-effect transistor (FET). Compared to O ₂ and N₂ annealed HfO₂-gated transistors, the H₂ annealed HfO₂-gated ZnO nanowire FET exhibited a higher transconductance of 1.77 × 10^-7AV^-1, on/off current ratio of ∼1.2 × 10⁴, and electron mobility of 11.90cm ²V^-1s^-1.

Original language	English
Pages (from-to)	2116-2121
Number of pages	6
Journal	Nanotechnology
Volume	17
Issue number	9
DOIs	https://doi.org/10.1088/0957-4484/17/9/007
Publication status	Published - 2006 May 14

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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title = "Chemical surface passivation of HfO2 films in a ZnO nanowire transistor",

abstract = "The effects of different annealing atmospheres on the chemical surface structure of HfO2 gate dielectric layers have been evaluated in terms of the improvement in the transconductance (gm), current on/off ratio (Ion/Ioff), and carrier mobility (μe) of a back-gated ZnO nanowire field-effect transistor (FET). Compared to O 2 and N2 annealed HfO2-gated transistors, the H2 annealed HfO2-gated ZnO nanowire FET exhibited a higher transconductance of 1.77 × 10-7AV-1, on/off current ratio of ∼1.2 × 104, and electron mobility of 11.90cm 2V-1s-1.",

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AU - Moon, Tae Hyoung

AU - Jeong, Min Chang

AU - Oh, Byeong Yun

AU - Ham, Moon Ho

AU - Jeun, Min Hong

AU - Lee, Woo Young

AU - Myoung, Jae Min

PY - 2006/5/14

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AB - The effects of different annealing atmospheres on the chemical surface structure of HfO2 gate dielectric layers have been evaluated in terms of the improvement in the transconductance (gm), current on/off ratio (Ion/Ioff), and carrier mobility (μe) of a back-gated ZnO nanowire field-effect transistor (FET). Compared to O 2 and N2 annealed HfO2-gated transistors, the H2 annealed HfO2-gated ZnO nanowire FET exhibited a higher transconductance of 1.77 × 10-7AV-1, on/off current ratio of ∼1.2 × 104, and electron mobility of 11.90cm 2V-1s-1.

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Chemical surface passivation of HfO₂ films in a ZnO nanowire transistor

Abstract

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