The effects of different annealing atmospheres on the chemical surface structure of HfO2 gate dielectric layers have been evaluated in terms of the improvement in the transconductance (gm), current on/off ratio (Ion/Ioff), and carrier mobility (μe) of a back-gated ZnO nanowire field-effect transistor (FET). Compared to O 2 and N2 annealed HfO2-gated transistors, the H2 annealed HfO2-gated ZnO nanowire FET exhibited a higher transconductance of 1.77 × 10-7AV-1, on/off current ratio of ∼1.2 × 104, and electron mobility of 11.90cm 2V-1s-1.
|Number of pages||6|
|Publication status||Published - 2006 May 14|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering