Chemical surface passivation of HfO2 films in a ZnO nanowire transistor

Tae Hyoung Moon, Min Chang Jeong, Byeong Yun Oh, Moon Ho Ham, Min Hong Jeun, Woo Young Lee, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The effects of different annealing atmospheres on the chemical surface structure of HfO2 gate dielectric layers have been evaluated in terms of the improvement in the transconductance (gm), current on/off ratio (Ion/Ioff), and carrier mobility (μe) of a back-gated ZnO nanowire field-effect transistor (FET). Compared to O 2 and N2 annealed HfO2-gated transistors, the H2 annealed HfO2-gated ZnO nanowire FET exhibited a higher transconductance of 1.77 × 10-7AV-1, on/off current ratio of ∼1.2 × 104, and electron mobility of 11.90cm 2V-1s-1.

Original languageEnglish
Pages (from-to)2116-2121
Number of pages6
Issue number9
Publication statusPublished - 2006 May 14

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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