Chemical bonding states and energy band gap of SiO2-incorporated La2O3 films on n-GaAs (001)

Jun Kyu Yang; Woo Sik Kim; Hyung Ho Park

doi:10.1016/j.tsf.2005.08.159

Chemical bonding states and energy band gap of SiO₂-incorporated La₂O₃ films on n-GaAs (001)

Jun Kyu Yang, Woo Sik Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

La-silicate of (La₂O₃)_0.6(SiO ₂)_0.4 was prepared by e-beam evaporation of mixed oxides target to control the chemical bonding state and band structure of La ₂O₃ film on n-GaAs (001). Prior to deposition of La-silicate film, sulfur passivation was performed on the surface of GaAs. The composition and uniformity of La-silicate film were simulated from the ratio of photoelectron intensity, I_{La 4d}/I_{Si 2p}, using angle resolved X-ray photoelectron spectroscopy. The formation of hydroxide phase was effectively prohibited when La-silicate is formed. Energy band gap of La ₂O₃ and La-silicate were estimated as ∼ 5.6 eV and ∼ 6.5 eV, respectively, by combining valence band and absorption spectra. The change in the energy band structure with regard to n-GaAs was correlated with electrical properties. An enhanced conduction band offset of La-silicate is evidenced by Fowler-Nordheim tunneling mechanism.

Original language	English
Pages (from-to)	311-314
Number of pages	4
Journal	Thin Solid Films
Volume	494
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.08.159
Publication status	Published - 2006 Jan 3

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant (KRF-2004-041-D00431). The experiments at PLS were supported in part by MOST and POSTECH.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2005.08.159

Cite this

@article{cf86c1d51c6e482e89efa7d1c86bde4b,

title = "Chemical bonding states and energy band gap of SiO2-incorporated La2O3 films on n-GaAs (001)",

abstract = "La-silicate of (La2O3)0.6(SiO 2)0.4 was prepared by e-beam evaporation of mixed oxides target to control the chemical bonding state and band structure of La 2O3 film on n-GaAs (001). Prior to deposition of La-silicate film, sulfur passivation was performed on the surface of GaAs. The composition and uniformity of La-silicate film were simulated from the ratio of photoelectron intensity, ILa 4d/ISi 2p, using angle resolved X-ray photoelectron spectroscopy. The formation of hydroxide phase was effectively prohibited when La-silicate is formed. Energy band gap of La 2O3 and La-silicate were estimated as ∼ 5.6 eV and ∼ 6.5 eV, respectively, by combining valence band and absorption spectra. The change in the energy band structure with regard to n-GaAs was correlated with electrical properties. An enhanced conduction band offset of La-silicate is evidenced by Fowler-Nordheim tunneling mechanism.",

author = "Yang, {Jun Kyu} and Kim, {Woo Sik} and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2004-041-D00431). The experiments at PLS were supported in part by MOST and POSTECH.",

year = "2006",

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doi = "10.1016/j.tsf.2005.08.159",

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T1 - Chemical bonding states and energy band gap of SiO2-incorporated La2O3 films on n-GaAs (001)

AU - Yang, Jun Kyu

AU - Kim, Woo Sik

AU - Park, Hyung Ho

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2004-041-D00431). The experiments at PLS were supported in part by MOST and POSTECH.

PY - 2006/1/3

Y1 - 2006/1/3

N2 - La-silicate of (La2O3)0.6(SiO 2)0.4 was prepared by e-beam evaporation of mixed oxides target to control the chemical bonding state and band structure of La 2O3 film on n-GaAs (001). Prior to deposition of La-silicate film, sulfur passivation was performed on the surface of GaAs. The composition and uniformity of La-silicate film were simulated from the ratio of photoelectron intensity, ILa 4d/ISi 2p, using angle resolved X-ray photoelectron spectroscopy. The formation of hydroxide phase was effectively prohibited when La-silicate is formed. Energy band gap of La 2O3 and La-silicate were estimated as ∼ 5.6 eV and ∼ 6.5 eV, respectively, by combining valence band and absorption spectra. The change in the energy band structure with regard to n-GaAs was correlated with electrical properties. An enhanced conduction band offset of La-silicate is evidenced by Fowler-Nordheim tunneling mechanism.

AB - La-silicate of (La2O3)0.6(SiO 2)0.4 was prepared by e-beam evaporation of mixed oxides target to control the chemical bonding state and band structure of La 2O3 film on n-GaAs (001). Prior to deposition of La-silicate film, sulfur passivation was performed on the surface of GaAs. The composition and uniformity of La-silicate film were simulated from the ratio of photoelectron intensity, ILa 4d/ISi 2p, using angle resolved X-ray photoelectron spectroscopy. The formation of hydroxide phase was effectively prohibited when La-silicate is formed. Energy band gap of La 2O3 and La-silicate were estimated as ∼ 5.6 eV and ∼ 6.5 eV, respectively, by combining valence band and absorption spectra. The change in the energy band structure with regard to n-GaAs was correlated with electrical properties. An enhanced conduction band offset of La-silicate is evidenced by Fowler-Nordheim tunneling mechanism.

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