The two-dimensional transition-metal dichalcogenide semiconductor MoS2 has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS2, however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS2 from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS2 flake so that electron charges might be transferred from MoS2 to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS2. Such charge depletion lowered the MoS2 Fermi level, which makes hole conduction favorable in MoS2 when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS2 flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS2 FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS2 flake.
|Number of pages||7|
|Journal||ACS Applied Materials and Interfaces|
|Publication status||Published - 2018 Jan 31|
Bibliographical noteFunding Information:
The authors acknowledge the financial support from NRF (NRL program: grant no. 2017R1A2A1A05001278, SRC program: grant no. 2017R1A5A1014862, vdWMRC center), Creative Materials Discovery Program through NRF funded by the Ministry of Science, ICT and Future Planning (grant no. 2015M3D1A1068061). M.Y. acknowledges the support from NRF (grant no. 2017R1A6A311034195).
© 2018 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)