Characterization of the p-type Sn_1-xMn_xO₂ oxide semiconductor nanoparticles by Sol-Gel method

This paper reports the properties of p-type oxide semiconductor Sn_1-xMn_xO₂ (MTO) nanoparticles with a low doping concentration of Mn (0 ≤ x ≤ 0.05) prepared with a sol-gel method. X-ray diffraction (XRD) results show that single-phase rutile MTO was obtained for x up to 0.03. The samples have particle average size of about 100 nm, which was confirmed with scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The compositional changes and electrical properties of the MTO nanoparticles were characterized by using x-ray photoelectron spectroscopy (XPS) and Hall effect measurements. Mn³⁺ cations are incorporated into the rutile SnO₂ lattice. P-type conduction which is arisen from the substitution of Mn³⁺ to Sn⁴⁺ lattice was demonstrate by Hall data. These compositions have hole carrier concentrations in the range 2.26∼8.53 × 10¹⁶ cm^-3 and exhibit Hall mobilities in the range 0.8∼4.1 cm²/Vs. The mobility of MTO decreases as the Mn content increases due to the doping effect. A transparent, ptype TFT device can be fabricated with this composition.