Characterization of silicon avalanche photodetectors fabricated in standard CMOS process

Hyo Soon Kang; Myung Jae Lee; Woo Young Choi

doi:10.1109/CLEOPR.2007.4391724

Characterization of silicon avalanche photodetectors fabricated in standard CMOS process

Hyo Soon Kang, Myung Jae Lee, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.

Original language	English
Title of host publication	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
DOIs	https://doi.org/10.1109/CLEOPR.2007.4391724
Publication status	Published - 2007
Event	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of Duration: 2007 Aug 26 → 2007 Aug 31

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other	2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
Country/Territory	Korea, Republic of
City	Seoul
Period	07/8/26 → 07/8/31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/CLEOPR.2007.4391724

Cite this

@inproceedings{b4cfc0d9e08e40c69a958acfd1412e40,

title = "Characterization of silicon avalanche photodetectors fabricated in standard CMOS process",

abstract = "We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.",

author = "Kang, {Hyo Soon} and Lee, {Myung Jae} and Choi, {Woo Young}",

year = "2007",

doi = "10.1109/CLEOPR.2007.4391724",

language = "English",

isbn = "1424411734",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

booktitle = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM",

note = "2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM ; Conference date: 26-08-2007 Through 31-08-2007",

}

Kang, HS, Lee, MJ & Choi, WY 2007, Characterization of silicon avalanche photodetectors fabricated in standard CMOS process. in 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM., 4391724, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM, Seoul, Korea, Republic of, 07/8/26. https://doi.org/10.1109/CLEOPR.2007.4391724

Characterization of silicon avalanche photodetectors fabricated in standard CMOS process. / Kang, Hyo Soon; Lee, Myung Jae; Choi, Woo Young.
2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM. 2007. 4391724 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Characterization of silicon avalanche photodetectors fabricated in standard CMOS process

AU - Kang, Hyo Soon

AU - Lee, Myung Jae

AU - Choi, Woo Young

PY - 2007

Y1 - 2007

N2 - We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.

AB - We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 μm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.

UR - http://www.scopus.com/inward/record.url?scp=51249098323&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51249098323&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2007.4391724

DO - 10.1109/CLEOPR.2007.4391724

M3 - Conference contribution

AN - SCOPUS:51249098323

SN - 1424411734

SN - 9781424411733

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM

T2 - 2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM

Y2 - 26 August 2007 through 31 August 2007

ER -

Characterization of silicon avalanche photodetectors fabricated in standard CMOS process

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