Characterization of SiC:H films deposited using HMDS precursor with C 2H2 dilution gas by remote PECVD system

Sung Hyuk Cho; Doo Jin Choi

doi:10.2109/jcersj2.117.558

Characterization of SiC:H films deposited using HMDS precursor with C ₂H₂ dilution gas by remote PECVD system

Sung Hyuk Cho, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C₂H ₂ gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp³/sp² carbon bonding ratio made lower dielectric constant.

Original language	English
Pages (from-to)	558-560
Number of pages	3
Journal	Journal of the Ceramic Society of Japan
Volume	117
Issue number	1365
DOIs	https://doi.org/10.2109/jcersj2.117.558
Publication status	Published - 2009 May

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.2109/jcersj2.117.558

Cite this

@article{e6d3d0bc33974c8da1571fd3fd82683f,

title = "Characterization of SiC:H films deposited using HMDS precursor with C 2H2 dilution gas by remote PECVD system",

abstract = "Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C2H 2 gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp3/sp2 carbon bonding ratio made lower dielectric constant.",

author = "Cho, {Sung Hyuk} and Choi, {Doo Jin}",

year = "2009",

month = may,

doi = "10.2109/jcersj2.117.558",

language = "English",

volume = "117",

pages = "558--560",

journal = "Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

number = "1365",

}

TY - JOUR

T1 - Characterization of SiC:H films deposited using HMDS precursor with C 2H2 dilution gas by remote PECVD system

AU - Cho, Sung Hyuk

AU - Choi, Doo Jin

PY - 2009/5

Y1 - 2009/5

N2 - Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C2H 2 gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp3/sp2 carbon bonding ratio made lower dielectric constant.

AB - Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C2H 2 gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp3/sp2 carbon bonding ratio made lower dielectric constant.

UR - http://www.scopus.com/inward/record.url?scp=67649363666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649363666&partnerID=8YFLogxK

U2 - 10.2109/jcersj2.117.558

DO - 10.2109/jcersj2.117.558

M3 - Article

AN - SCOPUS:67649363666

SN - 1882-0743

VL - 117

SP - 558

EP - 560

JO - Journal of the Ceramic Society of Japan

JF - Journal of the Ceramic Society of Japan

IS - 1365

ER -

Characterization of SiC:H films deposited using HMDS precursor with C ₂H₂ dilution gas by remote PECVD system

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this