Abstract
We present the characterization of poly-Si TFT fabricated below 170°C on plastic substrate using excimer laser crystallization of Xe sputtered Si films and gate insulator by using inductively coupled plasma CVD. In addition, stability and uniformity of TFT array between before and after sintering will be compared.
Original language | English |
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Pages | 1133-1135 |
Number of pages | 3 |
Publication status | Published - 2005 |
Event | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: 2005 Dec 6 → 2005 Dec 9 |
Other
Other | IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 |
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Country/Territory | Japan |
City | Takamatsu |
Period | 05/12/6 → 05/12/9 |
All Science Journal Classification (ASJC) codes
- Engineering(all)